EPE Association: EPE 2016 - LS3b: Active Components and New Materials

EPE 2016 - LS3b: Active Components and New Materials
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2016 ECCE Europe - Conference > EPE 2016 - Topic 01: Devices, Packaging and System Integration > EPE 2016 - LS3b: Active Components and New Materials

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   Modular plug-in high-performance assembly of a power converter
By Nicola DELMONTE [View]
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Abstract: This paper presents the work on an alternative integration scheme for a half-bridge switch using 70 µm thin Si IGBTs and diodes addressing higher strength, higher toughness and higher thermal conductivity. The switch is totally bond wireless, since bonded wires increase self-heating and introduce further thermomechanical degradation mechanisms. Moreover, this solution is equipped with double side liquid cooling, and plug-in edge connectors both on the driver and load sides, allowing high power density, good accessibility and modularity.The use of ad-hoc components, materials and techniques, as well as a good design using the latest CAD software for electrical simulation (SPICE) and the physical simulation of 3D thermal, thermo-fluid dynamic, electro-magnetic, and thermo-mechanical problems were considered at the early development stages. Here, particular attention is paid to physical simulations of the HBS and its edge connectors, to determine thermal and electro-magnetic behaviour. For example, in order to obtain an efficient heat extraction by the HBS, the design of a liquid-cooled heatsink was carried out by means of a CFD (Computational Fluid-Dynamic) analysis using COMSOL Multiphysics 5.2.Preliminary experimental results show good switching behavior.

   Short Circuit Detection Using the Gate Charge Characteristic for Trench/Fieldstop-IGBTs
By Karl OBERDIECK [View]
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Abstract: In this paper, the detection of insulated-gate bipolar transistors (IGBT) short-circuit failures based on the gate charge characteristic is investigated. The main focus are impacts of the parasitic inductances and the operating point on the gate charge characteristic, as well as limitations for this protection concept by this effects. An analogous detection circuit is developed and relevant implementation aspects are given. The concept is validated with a state-of-the-art Trench/Fieldstop-IGBT for electric vehicle traction application.

   Short-Circuit Behavior of series-connected High-Voltage IGBTs
By Jan FUHRMANN [View]
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Abstract: In operation of series-connected IGBTs a voltage balancing is necessary, during short circuits it is even more important. Within this paper the behavior of series-connected IGBTs and diodes during the short-circuit type 2 and 3 is analyzed. The dv/dt during the short circuit is determined by one of two equivalent circuit capacitances. One is the plasma capacitance and the second one is the Miller capacitance. Depending on the gate-drive unit the dv/dt is intrinsic, when the gate current is sufficiently high, and the plasma capacitance determines the desaturation process during short circuit. Or the gate current controls via the Miller-capacitance feedback the dv/dt. The results are obtained with the help of measurement on 3.3 kV-IGBTs.

   The Bimode Cross Switch (BXS) A Full Hybrid Solution in Switch- and Diode- modes
By Umamaheswara Reddy VEMULAPATI [View]
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Abstract: In this paper, we present for the first time, the experimental results of a 'Bimode Cross Switch (BXS)-Hybrid' built with 3.3kV Silicon Enhanced Trench Bi-mode IGBTs (Si-ET-BIGT) and Silicon Carbide MOSFETs (SiC-MOSFET). Also, we have compared the static (on-state) and dynamic (switching) characteristics of the 3.3kV BXS-Hybrid (1 x Si-ET-BIGT + 2 x SiC-MOSFET) with the full SiC-MOSFET (4 x SiC-MOSFET) and full Si-ET-BIGT (2 x Si-ET-BIGT) reference samples. In addition, we have investigated the MOS gate control (blanking time tbl) influence in diode mode during reverse recovery of the BXS-Hybrid and compared the results to those of the full Si-ET-BIGT. The experimental results show that BXS-Hybrid offers 45\% and 75\% reduction in the turn-off losses (in switch-mode) compared to full Si-ET-BIGT at nominal current (125A) and half-nominal current, respectively for nearly the same on-state voltage drop (at nominal current) or even much lower (at half nominal current). Also, the results show that the BXS-Hybrid offers 46\% and 49\% reduction in the reverse recovery losses (in diode-mode) compared to full Si-ET-BIGT at nominal current and half nominal current, respectively. Furthermore, the results show that the reverse recovery losses can be reduced as much as 55\% with the BXS-Hybrid compared to that of the full Si-ET-BIGT if the MOS gate control technique is used (for the tbl of 2µs). In addition, the BXS-Hybrid eliminates or reduces the oscillations compared to full SiC-MOSFET solution. In this study, the MOS gates of the devices in the BXS-Hybrid were connected together and controlled by the same single gate unit (with one common gate resistor).

EPE 2016 - LS3b: Active Components and New Materials
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2016 ECCE Europe - Conference > EPE 2016 - Topic 01: Devices, Packaging and System Integration > EPE 2016 - LS3b: Active Components and New Materials
	[return to parent folder]

	Modular plug-in high-performance assembly of a power converter By Nicola DELMONTE	[View] [Download]
Abstract: This paper presents the work on an alternative integration scheme for a half-bridge switch using 70 µm thin Si IGBTs and diodes addressing higher strength, higher toughness and higher thermal conductivity. The switch is totally bond wireless, since bonded wires increase self-heating and introduce further thermomechanical degradation mechanisms. Moreover, this solution is equipped with double side liquid cooling, and plug-in edge connectors both on the driver and load sides, allowing high power density, good accessibility and modularity.The use of ad-hoc components, materials and techniques, as well as a good design using the latest CAD software for electrical simulation (SPICE) and the physical simulation of 3D thermal, thermo-fluid dynamic, electro-magnetic, and thermo-mechanical problems were considered at the early development stages. Here, particular attention is paid to physical simulations of the HBS and its edge connectors, to determine thermal and electro-magnetic behaviour. For example, in order to obtain an efficient heat extraction by the HBS, the design of a liquid-cooled heatsink was carried out by means of a CFD (Computational Fluid-Dynamic) analysis using COMSOL Multiphysics 5.2.Preliminary experimental results show good switching behavior.

	Short Circuit Detection Using the Gate Charge Characteristic for Trench/Fieldstop-IGBTs By Karl OBERDIECK	[View] [Download]
Abstract: In this paper, the detection of insulated-gate bipolar transistors (IGBT) short-circuit failures based on the gate charge characteristic is investigated. The main focus are impacts of the parasitic inductances and the operating point on the gate charge characteristic, as well as limitations for this protection concept by this effects. An analogous detection circuit is developed and relevant implementation aspects are given. The concept is validated with a state-of-the-art Trench/Fieldstop-IGBT for electric vehicle traction application.

	Short-Circuit Behavior of series-connected High-Voltage IGBTs By Jan FUHRMANN	[View] [Download]
Abstract: In operation of series-connected IGBTs a voltage balancing is necessary, during short circuits it is even more important. Within this paper the behavior of series-connected IGBTs and diodes during the short-circuit type 2 and 3 is analyzed. The dv/dt during the short circuit is determined by one of two equivalent circuit capacitances. One is the plasma capacitance and the second one is the Miller capacitance. Depending on the gate-drive unit the dv/dt is intrinsic, when the gate current is sufficiently high, and the plasma capacitance determines the desaturation process during short circuit. Or the gate current controls via the Miller-capacitance feedback the dv/dt. The results are obtained with the help of measurement on 3.3 kV-IGBTs.

	The Bimode Cross Switch (BXS) A Full Hybrid Solution in Switch- and Diode- modes By Umamaheswara Reddy VEMULAPATI	[View] [Download]
Abstract: In this paper, we present for the first time, the experimental results of a 'Bimode Cross Switch (BXS)-Hybrid' built with 3.3kV Silicon Enhanced Trench Bi-mode IGBTs (Si-ET-BIGT) and Silicon Carbide MOSFETs (SiC-MOSFET). Also, we have compared the static (on-state) and dynamic (switching) characteristics of the 3.3kV BXS-Hybrid (1 x Si-ET-BIGT + 2 x SiC-MOSFET) with the full SiC-MOSFET (4 x SiC-MOSFET) and full Si-ET-BIGT (2 x Si-ET-BIGT) reference samples. In addition, we have investigated the MOS gate control (blanking time tbl) influence in diode mode during reverse recovery of the BXS-Hybrid and compared the results to those of the full Si-ET-BIGT. The experimental results show that BXS-Hybrid offers 45\% and 75\% reduction in the turn-off losses (in switch-mode) compared to full Si-ET-BIGT at nominal current (125A) and half-nominal current, respectively for nearly the same on-state voltage drop (at nominal current) or even much lower (at half nominal current). Also, the results show that the BXS-Hybrid offers 46\% and 49\% reduction in the reverse recovery losses (in diode-mode) compared to full Si-ET-BIGT at nominal current and half nominal current, respectively. Furthermore, the results show that the reverse recovery losses can be reduced as much as 55\% with the BXS-Hybrid compared to that of the full Si-ET-BIGT if the MOS gate control technique is used (for the tbl of 2µs). In addition, the BXS-Hybrid eliminates or reduces the oscillations compared to full SiC-MOSFET solution. In this study, the MOS gates of the devices in the BXS-Hybrid were connected together and controlled by the same single gate unit (with one common gate resistor).