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   Short-Circuit Behavior of series-connected High-Voltage IGBTs   [View] 
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 Author(s)   Jan FUHRMANN 
 Abstract   In operation of series-connected IGBTs a voltage balancing is necessary, during short circuits it is even more important. Within this paper the behavior of series-connected IGBTs and diodes during the short-circuit type 2 and 3 is analyzed. The dv/dt during the short circuit is determined by one of two equivalent circuit capacitances. One is the plasma capacitance and the second one is the Miller capacitance. Depending on the gate-drive unit the dv/dt is intrinsic, when the gate current is sufficiently high, and the plasma capacitance determines the desaturation process during short circuit. Or the gate current controls via the Miller-capacitance feedback the dv/dt. The results are obtained with the help of measurement on 3.3 kV-IGBTs. 
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Filename:0292-epe2016-full-15590814.pdf
Filesize:1.795 MB
 Type   Members Only 
 Date   Last modified 2017-04-13 by System