EPE Association: EPE 2016 - LS4b: Power System Integration, Packaging & Thermal Management

EPE 2016 - LS4b: Power System Integration, Packaging & Thermal Management
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2016 ECCE Europe - Conference > EPE 2016 - Topic 01: Devices, Packaging and System Integration > EPE 2016 - LS4b: Power System Integration, Packaging & Thermal Management

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   Improved surge current capability of power diode with copper metallisation and heavy copper wire bonding
By Maolong KE [View]
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Abstract: Copper metallization and copper wire bonding of high power semiconductor devices have attractedgrowing attention in recent years due to potentially much improved reliability and increased lifetime.However, significant technical challenges still remain for its wide commercial use. Here a thickcopper layer has been successfully grown onto 3300V fast recovery diodes and subsequently 16milcopper wires were used to bond the chips onto substrates. Much improved surge current performanceof these copper metallized and heavy copper wire-bonded diodes over its aluminium counterpart isreported here, and the results are analysed with the help of simulation.

   Investigations of SMPD SiC-MOSFET phase-leg modules for MHz inverters
By Fabian DENK [View]
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Abstract: In this work we present results of investigations on the usability of ISOPLUS SMPD SiC-MOSFETphase-leg modules for medium-frequency resonant inverters. These modules combine excellent thermalperformance, very low parasitic inductances and good switching performance with the benefits ofsurface-mountable packages. In the first step, a SPICE and a thermal simulation of a half-bridge inverterusing the SMPD module and one using discrete SiC-MOSFETs in TO-247 package was performed.Here, the semiconductor losses of the discrete devices were 2.5 times higher than the one of the SMPDmodule. In the second step, a modular prototype of a resonant MHz half-bridge inverter with the SMPDmodule was built. A short circuit test and efficiency measurements with an ohmic load showed anexcellent switching performance of the SMPD SiC-MOSFET phase-leg module in the MHZ range. Withthe inverter prototype, an efficiency of > 95\% was measured, at a switching frequency of 2.01 MHz andan output power of 5.6 kW delivered to the load resistor.

   Low parasitic inductance multi-chip SiC devices packaging technology
By Bassem MOUAWAD [View]
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Abstract: This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at blocking voltage up to 2.5kV has been designed to accommodate 8 SiC JFETs and 4 SiC diodes. Electromagnetic simulation results reveal extremely low inductance values of the major loops. Then the prototyping of the designed package including the assembly process, all the electrical test to evaluate the electrical performance are presented.

   Silicon Carbide MOSFETs in More Electric Aircraft Power Converters: The Performance and Reliability benefits over Silicon IGBTs for a specified Flight Mission P
By Shane O'DONNELL [View]
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Abstract: This paper describes the design, construction and performance of a 5 kVA aviation power modulecontaining silicon carbide MOSFETs. The function and control of this module within a commercialaviation power electrical control unit (ECU) application is explained and the power dissipationbenefits from the use of these MOSFETs instead of silicon IGBTs when driving an electrical motorcontrolling an aileron are presented. The paper shows the calculated reliability figures for the powermodule in this application and an application-specific reliability test to verify 150,000 flight hours ofmodule operation is introduced. Performance test results from a prototype unit are also presented.

EPE 2016 - LS4b: Power System Integration, Packaging & Thermal Management
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2016 ECCE Europe - Conference > EPE 2016 - Topic 01: Devices, Packaging and System Integration > EPE 2016 - LS4b: Power System Integration, Packaging & Thermal Management
	[return to parent folder]

	Improved surge current capability of power diode with copper metallisation and heavy copper wire bonding By Maolong KE	[View] [Download]
Abstract: Copper metallization and copper wire bonding of high power semiconductor devices have attractedgrowing attention in recent years due to potentially much improved reliability and increased lifetime.However, significant technical challenges still remain for its wide commercial use. Here a thickcopper layer has been successfully grown onto 3300V fast recovery diodes and subsequently 16milcopper wires were used to bond the chips onto substrates. Much improved surge current performanceof these copper metallized and heavy copper wire-bonded diodes over its aluminium counterpart isreported here, and the results are analysed with the help of simulation.

	Investigations of SMPD SiC-MOSFET phase-leg modules for MHz inverters By Fabian DENK	[View] [Download]
Abstract: In this work we present results of investigations on the usability of ISOPLUS SMPD SiC-MOSFETphase-leg modules for medium-frequency resonant inverters. These modules combine excellent thermalperformance, very low parasitic inductances and good switching performance with the benefits ofsurface-mountable packages. In the first step, a SPICE and a thermal simulation of a half-bridge inverterusing the SMPD module and one using discrete SiC-MOSFETs in TO-247 package was performed.Here, the semiconductor losses of the discrete devices were 2.5 times higher than the one of the SMPDmodule. In the second step, a modular prototype of a resonant MHz half-bridge inverter with the SMPDmodule was built. A short circuit test and efficiency measurements with an ohmic load showed anexcellent switching performance of the SMPD SiC-MOSFET phase-leg module in the MHZ range. Withthe inverter prototype, an efficiency of > 95\% was measured, at a switching frequency of 2.01 MHz andan output power of 5.6 kW delivered to the load resistor.

	Low parasitic inductance multi-chip SiC devices packaging technology By Bassem MOUAWAD	[View] [Download]
Abstract: This paper presents a novel packaging structure which employs stacked substrate and flexible printed circuit board (PCB) to obtain very low parasitic inductance and hence feature high switching speed SiC power devices. A half-bridge module aimed at blocking voltage up to 2.5kV has been designed to accommodate 8 SiC JFETs and 4 SiC diodes. Electromagnetic simulation results reveal extremely low inductance values of the major loops. Then the prototyping of the designed package including the assembly process, all the electrical test to evaluate the electrical performance are presented.

	Silicon Carbide MOSFETs in More Electric Aircraft Power Converters: The Performance and Reliability benefits over Silicon IGBTs for a specified Flight Mission P By Shane O'DONNELL	[View] [Download]
Abstract: This paper describes the design, construction and performance of a 5 kVA aviation power modulecontaining silicon carbide MOSFETs. The function and control of this module within a commercialaviation power electrical control unit (ECU) application is explained and the power dissipationbenefits from the use of these MOSFETs instead of silicon IGBTs when driving an electrical motorcontrolling an aileron are presented. The paper shows the calculated reliability figures for the powermodule in this application and an application-specific reliability test to verify 150,000 flight hours ofmodule operation is introduced. Performance test results from a prototype unit are also presented.