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Improved surge current capability of power diode with copper metallisation and heavy copper wire bonding
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| Author(s) |
Maolong KE |
| Abstract |
Copper metallization and copper wire bonding of high power semiconductor devices have attractedgrowing attention in recent years due to potentially much improved reliability and increased lifetime.However, significant technical challenges still remain for its wide commercial use. Here a thickcopper layer has been successfully grown onto 3300V fast recovery diodes and subsequently 16milcopper wires were used to bond the chips onto substrates. Much improved surge current performanceof these copper metallized and heavy copper wire-bonded diodes over its aluminium counterpart isreported here, and the results are analysed with the help of simulation. |
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| Filename: | 0168-epe2016-full-12481819.pdf |
| Filesize: | 461.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
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