EPE Association: EPE 2015 - LS5b: Active Components

EPE 2015 - LS5b: Active Components
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2015 ECCE Europe - Conference > EPE 2015 - Topic 01: Devices, Packaging and System Integration > EPE 2015 - LS5b: Active Components

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   Diode snappiness from a user's perspective
By JORGE MARI [View]
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Abstract: This paper deals with reverse recovery and snappiness in high voltage PiN diodes as the ones currently used in high power electronics applications. It suggests a practical quantitative definition for the occurrence of snappiness and investigates unusual phenomena that might occur during reverse recovery.

   Physics Based Modelling and Experimental Characterisation of Parasitic Turn-On in IGBTs
By Roozbeh BONYADI [View]
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Abstract: As power electronic engineers increase the switching speed of voltage source converters for thepurpose of higher power density, the dI/dt and dV/dt across the power semiconductors increases aswell. A well-known adverse consequence of high dV/dt is parasitic turn-on of the power device in thesame phase leg as the device being triggered. This causes a short circuit with high shoot-throughcurrent, high instantaneous power dissipation and possibly device degradation and destruction. It iscritical for converter designers to be able to accurately predict this phenomenon through diagnosticand predictive modelling. In this paper, a physics-based device and circuit model is presented togetherwith experimental results on parasitic turn-on of IGBTs in voltage source converters. Because themodel is physics based, it produces more accurate results compared with compact circuit models likeSPICE and other circuit models that use lumped parameters. The discharge of the Miller capacitance issimulated as a voltage dependent depletion capacitance and an oxide capacitance as opposed to alumped capacitor. The model presented accurately simulates IGBT tail currents, PiN diode reverserecovery and the non-linear miller capacitance all of which cannot be solved by lumped parametercompact models. This is due to the fact that the IGBT current in the model is calculated using theFourier series based re-construction of the ambipolar diffusion equation and the miller capacitancesare calculated using fundamental device physics equations. This paper presents a physics-based deviceand circuit model for parasitic turn-on in silicon IGBTs by numerically modelling the minority carrierdistribution profile in the drift region. The model is able to accurately replicate the transientwaveforms by avoiding the use of lumped parameters normally used in compact models.

   Recent Advancements in IGCT Technologies for High Power Electronics Applications
By Umamaheswara VEMULAPATI [View]
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Abstract: In this paper, we review the progress made recently for further developing the Integrated Gate Commutated Thyristor (IGCT) device concept for high power electronics applications. A wide range of newly introduced IGCT technologies are discussed and recent prototype experimental results as well as novel structures and future trends of the IGCT technology are presented. This will provide system designers with a comprehensive overview of the potentials possible with this device concept.

   The compact and high power density 7th generation IGBT module
By Alexander THEISEN [View]
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Abstract: Recently the main requirements found in the market are further downsizing and higher efficiency ofpower conversion systems. Enhanced power density of the power modules will be the key to succeed.The increasing package reliability in higher junction temperature operation will be the majorchallenge. By further improvement of the chip characteristics and the development of new highreliability package materials and technologies, the performance of the modules were significantlyimproved. Additionally, the maximum operating temperature was even increased to up to 175°C. Thenew 7th generation IGBT module realized further downsizing and higher efficiency of powerconversion systems.

EPE 2015 - LS5b: Active Components
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2015 ECCE Europe - Conference > EPE 2015 - Topic 01: Devices, Packaging and System Integration > EPE 2015 - LS5b: Active Components
	[return to parent folder]

	Diode snappiness from a user's perspective By JORGE MARI	[View] [Download]
Abstract: This paper deals with reverse recovery and snappiness in high voltage PiN diodes as the ones currently used in high power electronics applications. It suggests a practical quantitative definition for the occurrence of snappiness and investigates unusual phenomena that might occur during reverse recovery.

	Physics Based Modelling and Experimental Characterisation of Parasitic Turn-On in IGBTs By Roozbeh BONYADI	[View] [Download]
Abstract: As power electronic engineers increase the switching speed of voltage source converters for thepurpose of higher power density, the dI/dt and dV/dt across the power semiconductors increases aswell. A well-known adverse consequence of high dV/dt is parasitic turn-on of the power device in thesame phase leg as the device being triggered. This causes a short circuit with high shoot-throughcurrent, high instantaneous power dissipation and possibly device degradation and destruction. It iscritical for converter designers to be able to accurately predict this phenomenon through diagnosticand predictive modelling. In this paper, a physics-based device and circuit model is presented togetherwith experimental results on parasitic turn-on of IGBTs in voltage source converters. Because themodel is physics based, it produces more accurate results compared with compact circuit models likeSPICE and other circuit models that use lumped parameters. The discharge of the Miller capacitance issimulated as a voltage dependent depletion capacitance and an oxide capacitance as opposed to alumped capacitor. The model presented accurately simulates IGBT tail currents, PiN diode reverserecovery and the non-linear miller capacitance all of which cannot be solved by lumped parametercompact models. This is due to the fact that the IGBT current in the model is calculated using theFourier series based re-construction of the ambipolar diffusion equation and the miller capacitancesare calculated using fundamental device physics equations. This paper presents a physics-based deviceand circuit model for parasitic turn-on in silicon IGBTs by numerically modelling the minority carrierdistribution profile in the drift region. The model is able to accurately replicate the transientwaveforms by avoiding the use of lumped parameters normally used in compact models.

	Recent Advancements in IGCT Technologies for High Power Electronics Applications By Umamaheswara VEMULAPATI	[View] [Download]
Abstract: In this paper, we review the progress made recently for further developing the Integrated Gate Commutated Thyristor (IGCT) device concept for high power electronics applications. A wide range of newly introduced IGCT technologies are discussed and recent prototype experimental results as well as novel structures and future trends of the IGCT technology are presented. This will provide system designers with a comprehensive overview of the potentials possible with this device concept.

	The compact and high power density 7th generation IGBT module By Alexander THEISEN	[View] [Download]
Abstract: Recently the main requirements found in the market are further downsizing and higher efficiency ofpower conversion systems. Enhanced power density of the power modules will be the key to succeed.The increasing package reliability in higher junction temperature operation will be the majorchallenge. By further improvement of the chip characteristics and the development of new highreliability package materials and technologies, the performance of the modules were significantlyimproved. Additionally, the maximum operating temperature was even increased to up to 175°C. Thenew 7th generation IGBT module realized further downsizing and higher efficiency of powerconversion systems.