EPE Association: EPE 1995 - 09 - Lecture Session L3a: MCT, NEW DEVELOPMENTS

EPE 1995 - 09 - Lecture Session L3a: MCT, NEW DEVELOPMENTS
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1995 - Conference > EPE 1995 - 09 - Lecture Session L3a: MCT, NEW DEVELOPMENTS

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   BEHAVIOUR ANALYSIS OF MCT UNDER ZVS AND ZCS CONDITIONS
By J.M. Li; A. Merazga; D. Lafore [View]
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Abstract: MCT is a new power device which combines the lower on state voltage and the higher current density of the thyristor together with the simplicity of the MOS gate turn-on and turn-off. ZVS and ZCS soft-switching conditions are encountered in several resonant converter configurations. The purpose of this paper is to present a behaviour analysis of the MCT in ZVS and ZCS soft-switching modes. Two test circuits, allowing the above switching conditions in single shot mode and easy adjustment of analyzing parameters such as transient turn-on voltage spike as a function of dI/dt for ZVS and transient turn-off current spike and tail current as a function of dV/dt for ZCS, are proposed. Inside physical description of the MCT in each switching mode is also presented, to provide usefull insights into the physics of the device with a view to obtaining the best possible performances.

   STANDARD AND SHORTED ANODE NON-PUNCH-THROUGH EMITTER SWITCHED THYRISTORS
By D. Flores; P. Godignon; M. Vellvehi; J. Fernandez; S. Hidalgo; J. Rebollo; J. Millan [View]
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Abstract: This paper is aimed at the analysis of the electrical characterisitics of non-punch-through EST structures. The operation moide and the transient process are studied by means of 2D numerical simulations. Standard and shorted anode test structures were fabricated with a conventional IGBT process technology, and their characteristics are compared with those of IGBT and BRT structures. It is shown the improvement of the EST turnoff time when including the shorted anode structure, and the dependence of the maximum controllable current on the device geometrical dimensions.

   A NEW BARRIER LOWERING MODEL FOR METAL-SILICIDE SCHOTTKY POWER DIODES
By C. Furio; G. Charitat; A. Lhorte; J-M. Dilhac [View]
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Abstract: From experimental data, it is first demonstrated that the common field-dependent lowering models are not sufficient, for taking into account the softness of reverse I(V) characteristics of metal Silicide Schottky power diodes, at high reverse bias voltages. A new barrier lowering model is then derived from the experimental characterization of diode structures exhibiting different technological features (Silicide type, doping level, drift region thickness). The global field lowering versus electric field, is expressed as being the result of the contribution of four terms of increasing order. This allows a description of metal-Silicide Schottky power diode behaviour, at high reverse bias voltages, covering thus a wider reverse voltage range than previous models, with a good agreement between calculated and experimental data. Numerical results deduced from Pisces simulations using this new model gives equally excellent agreement between simulated and measured values.

   MODELING OF HIGH-POWER THYRISTORS USING THE LUMPED-CHARGE MODELING TECHNIQUE
By C. L. Ma; P. O. Lauritzen; J. Sigg [View]
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Abstract: A systematic modeling approach, the Lumped-Charge modeling technique, is used to build a high-power thyristor model for power electronic simulation. The model consists of simplified one-dimensional semiconductor equations and provides most of the important characteristics of thyristors under static and dynamic conditions. The model is completely physics based with no curve-fitting equations.

EPE 1995 - 09 - Lecture Session L3a: MCT, NEW DEVELOPMENTS
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1995 - Conference > EPE 1995 - 09 - Lecture Session L3a: MCT, NEW DEVELOPMENTS
	[return to parent folder]

	BEHAVIOUR ANALYSIS OF MCT UNDER ZVS AND ZCS CONDITIONS By J.M. Li; A. Merazga; D. Lafore	[View] [Download]
Abstract: MCT is a new power device which combines the lower on state voltage and the higher current density of the thyristor together with the simplicity of the MOS gate turn-on and turn-off. ZVS and ZCS soft-switching conditions are encountered in several resonant converter configurations. The purpose of this paper is to present a behaviour analysis of the MCT in ZVS and ZCS soft-switching modes. Two test circuits, allowing the above switching conditions in single shot mode and easy adjustment of analyzing parameters such as transient turn-on voltage spike as a function of dI/dt for ZVS and transient turn-off current spike and tail current as a function of dV/dt for ZCS, are proposed. Inside physical description of the MCT in each switching mode is also presented, to provide usefull insights into the physics of the device with a view to obtaining the best possible performances.

	STANDARD AND SHORTED ANODE NON-PUNCH-THROUGH EMITTER SWITCHED THYRISTORS By D. Flores; P. Godignon; M. Vellvehi; J. Fernandez; S. Hidalgo; J. Rebollo; J. Millan	[View] [Download]
Abstract: This paper is aimed at the analysis of the electrical characterisitics of non-punch-through EST structures. The operation moide and the transient process are studied by means of 2D numerical simulations. Standard and shorted anode test structures were fabricated with a conventional IGBT process technology, and their characteristics are compared with those of IGBT and BRT structures. It is shown the improvement of the EST turnoff time when including the shorted anode structure, and the dependence of the maximum controllable current on the device geometrical dimensions.

	A NEW BARRIER LOWERING MODEL FOR METAL-SILICIDE SCHOTTKY POWER DIODES By C. Furio; G. Charitat; A. Lhorte; J-M. Dilhac	[View] [Download]
Abstract: From experimental data, it is first demonstrated that the common field-dependent lowering models are not sufficient, for taking into account the softness of reverse I(V) characteristics of metal Silicide Schottky power diodes, at high reverse bias voltages. A new barrier lowering model is then derived from the experimental characterization of diode structures exhibiting different technological features (Silicide type, doping level, drift region thickness). The global field lowering versus electric field, is expressed as being the result of the contribution of four terms of increasing order. This allows a description of metal-Silicide Schottky power diode behaviour, at high reverse bias voltages, covering thus a wider reverse voltage range than previous models, with a good agreement between calculated and experimental data. Numerical results deduced from Pisces simulations using this new model gives equally excellent agreement between simulated and measured values.

	MODELING OF HIGH-POWER THYRISTORS USING THE LUMPED-CHARGE MODELING TECHNIQUE By C. L. Ma; P. O. Lauritzen; J. Sigg	[View] [Download]
Abstract: A systematic modeling approach, the Lumped-Charge modeling technique, is used to build a high-power thyristor model for power electronic simulation. The model consists of simplified one-dimensional semiconductor equations and provides most of the important characteristics of thyristors under static and dynamic conditions. The model is completely physics based with no curve-fitting equations.