| Abstract |
From experimental data, it is first demonstrated that the common field-dependent lowering models are not sufficient, for taking into account the softness of reverse I(V) characteristics of metal Silicide Schottky power diodes, at high reverse bias voltages. A new barrier lowering model is then derived from the experimental characterization of diode structures exhibiting different technological features (Silicide type, doping level, drift region thickness). The global field lowering versus electric field, is expressed as being the result of the contribution of four terms of increasing order. This allows a description of metal-Silicide Schottky power diode behaviour, at high reverse bias voltages, covering thus a wider reverse voltage range than previous models, with a good agreement between calculated and experimental data. Numerical results deduced from Pisces simulations using this new
model gives equally excellent agreement between simulated and measured values. |
