EPE Association: EPE 1997 – 76: Dialogue Session DS1e-2: CHARACTERIZATION AND APPLICATIONS

EPE 1997 – 76: Dialogue Session DS1e-2: CHARACTERIZATION AND APPLICATIONS
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 76: Dialogue Session DS1e-2: CHARACTERIZATION AND APPLICATIONS

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   AN EASY METHOD TO ESTIMATE SWITCH-OFF LOSSES IN YOUR APPLICATION
By D. Lafore; A. Merazga; J. M. Li [View]
[Download]

Abstract: Designing a power converter requires a lot of information ranging from power devices to thermal factor. Losses estimation is very complex because it depends on converter structure, components, drive technique, temperature and their interactions. Simulation is not well adapted to solving this problem. We propose a simple method, for switch-off loss evaluation, using an experimental model in hard switching. We demonstrate that it is useful for all other switching conditions (soft).

   ACTIVE VOLTAGE CLAMPING TECHNIQUES FOR OVERVOLTAGE PROTECTION OF MOS-CONTROLLED POWER TRANSISTORS
By T. Reimann; R. Krümmer; J. Petzoldt [View]
[Download]

Abstract: Power electronic devices and switches in power converter circuits must be kept from destinction caused by inadmissible high voltages. Different technical possibilities exist to prevent dangerous overvoltages. Besides the passive clamping and dynamic gate control (DGC) techniques the principle of active voltage clamping is very suitable and simple for power semiconductor device voltage protection. The principle of active voltage clamping is discussed in detail in this paper and different variants for the technical realization are introduced. A very rugged zener element can be realized by using suppressor diodes together with an amplifying discrete IGBT. This configuration was tested successfully in both the periodic and aperiodic clamping mode with low and high clamping energies.

   APPLICATION DEPENDENT GATE TRIGGER REQUIREMENTS OF GTO THYRISTORS
By F. J. Wakeman; M. S. Khanniche [View]
[Download]

Abstract: The influence of the forward gate characteristics on the performance of Gate turn-off (GTO) thyristors in a range of practical applications including pulse power and voltage fed inverters is considered, with a series of experimental measurements being conducted on a wide ranging sample of test devices. The results obtained in experimental measurements are compared to those carried out in the normal rating procedure for this type of device and the optimised forward gating requirements of the GTO thyristor in a number of the applications is discussed.

   AN EXPERIMENTALLY VALIDATED TRANSIENT THERMAL IMPEDANCE MODEL FOR HIGH POWER DIODES AND THYRISTORS
By F. Profumo; A. Tenconi; S. Facelli; B. Passerini; A. Guerra [View]
[Download]

Abstract: In this paper a thermal model that allows to obtain the transient thermal impedance curve of high power diodes and thyristors is presented. The results obtained from the model are compared with the experimental measurements performed on the most diffused families of device packages. In the last section of the paper a method for predicting the transient junction temperature by using PSPICE is outlined. The method is based on the fitting of the transient thermal impedance curve with a finite series of exponential terms.

   A SYSTEMATIC APPROACH FOR TESTING TODAY'S POWER SEMICONDUCTORS TO OBTAIN A GENERALLY APPLICABLE CHARACTERIZATION
By Andreas Lindemann [View]
[Download]

Abstract: New characterization and testing methods have been developed with respect to the state of the art in power semiconductors. Their knowledge and use is decisive for reliable and efficient simulation and design of power electronic converters. This paper shows principles of characterization in a systematic approach. Their meaning for component applications is derived. Furtherly testing methods to gain the required data are derived. Testers recently developed for characterization and quality assurance measurements and results obtained with them are presented. Thus this paper shows the links between characterization, testing and application for fast switching power semiconductors. It focusses on insulated gate bipolar transistors (IGBT) as typical devices of this type.

   EVALUATION AND MODELLING OF THE POWER LOSSES IN THE HORIZONTAL DEFLECTION CIRCUIT IN TELEVISIONS - WITH FOCUS ON THE SEMICONDUCTORS
By Leo Ostergaard; Uffe B. Jensen [View]
[Download]

Abstract: This paper presents measurement and modelling results of the power losses in the horizontal deflection circuit in television receivers. By using the available component models in Saber™ it is shown that the characteristic quasi stationary shapes of the voltages and the currents can be achieved by simulations. The measured distribution of the power losses shows that the power diodes and the BJT are responsible for approximately 22% of the total power loss in the basic deflection circuit. The forward recovery causes the major part of the power loss in the power diode while the power loss in the BIT is mainly caused by the turnoff loss. A discussion of the BJT model and the diode models in Saber™ is given and the most suitable models for this application are chosen. From simulations and measurements, it is concluded that the power losses can be predicted by an accuracy of less than 5%.

   EVALUATION AND COMPARISON OF ENERGY LOSS IN REGENERATIVE AND NONLINEAR DISSIPATIVE SNUBBERS FOR BRIDGE LEGS
By Deng Yan; Xiangning He; Zhaoming Qian; B. W. Williams [View]
[Download]

Abstract: A regenerative snubber recovers energy while a part of it is dissipated in the imperfect additional components. Nonlinear snubber is an alternative that reduces energy stored then reduces the total loss remarkably. A novel regenerative configuration and a dissipative one which employing both nonlinear reactors and capacitors are considered in the application of a 500V, 50A PWM voltage source inverter (VSI) phase leg. Design, evaluation and comparison of energy loss and recover efficiency have been done by Pspice simulation with experiment confirmation.

   A New Fault Tolerant Semiconductor Laser Triggering System for Light Trigger Thyristors
By George Rost; Chika O. Nwankpa; Robert Fischl; Arye Rosen; Dean Gilbert; David Richardson [View]
[Download]

Abstract: This paper presents a new fault tolerant semiconductor laser driver system for light triggered thyristors. Our system features two semiconductor lasers, one laser is used for primary firing and the other is fired in the event of a failure, thus providing adequate redundancy.

   OPTIMISATION OF THE THERMAL METAL SPRAY PROCESS FOR THE MANUFACTURE OF MASS PRODUCED HYBRID INTEGRATED POWER ELECTRONIC CONVERTERS
By P. A. Janse van Rensburg; J. D. van Wyk [View]
[Download]

Abstract: The thermal spray (THSP) process has proven to be a cost-effective and versatile manufacturing technology for hybrid integrated power electronic converters, and can make mass-production of integrated power electronic converters possible. One of the main drawbacks of the· process is the unpredictability of the quality of the sprayed layer with changes in process parameters. An experimental set-up has been devised to optimize the flame-spray process for sprayed copper as a conductive material for hybrid integrated power electronic converters.

EPE 1997 – 76: Dialogue Session DS1e-2: CHARACTERIZATION AND APPLICATIONS
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 76: Dialogue Session DS1e-2: CHARACTERIZATION AND APPLICATIONS
	[return to parent folder]

	AN EASY METHOD TO ESTIMATE SWITCH-OFF LOSSES IN YOUR APPLICATION By D. Lafore; A. Merazga; J. M. Li	[View] [Download]
Abstract: Designing a power converter requires a lot of information ranging from power devices to thermal factor. Losses estimation is very complex because it depends on converter structure, components, drive technique, temperature and their interactions. Simulation is not well adapted to solving this problem. We propose a simple method, for switch-off loss evaluation, using an experimental model in hard switching. We demonstrate that it is useful for all other switching conditions (soft).

	ACTIVE VOLTAGE CLAMPING TECHNIQUES FOR OVERVOLTAGE PROTECTION OF MOS-CONTROLLED POWER TRANSISTORS By T. Reimann; R. Krümmer; J. Petzoldt	[View] [Download]
Abstract: Power electronic devices and switches in power converter circuits must be kept from destinction caused by inadmissible high voltages. Different technical possibilities exist to prevent dangerous overvoltages. Besides the passive clamping and dynamic gate control (DGC) techniques the principle of active voltage clamping is very suitable and simple for power semiconductor device voltage protection. The principle of active voltage clamping is discussed in detail in this paper and different variants for the technical realization are introduced. A very rugged zener element can be realized by using suppressor diodes together with an amplifying discrete IGBT. This configuration was tested successfully in both the periodic and aperiodic clamping mode with low and high clamping energies.

	APPLICATION DEPENDENT GATE TRIGGER REQUIREMENTS OF GTO THYRISTORS By F. J. Wakeman; M. S. Khanniche	[View] [Download]
Abstract: The influence of the forward gate characteristics on the performance of Gate turn-off (GTO) thyristors in a range of practical applications including pulse power and voltage fed inverters is considered, with a series of experimental measurements being conducted on a wide ranging sample of test devices. The results obtained in experimental measurements are compared to those carried out in the normal rating procedure for this type of device and the optimised forward gating requirements of the GTO thyristor in a number of the applications is discussed.

	AN EXPERIMENTALLY VALIDATED TRANSIENT THERMAL IMPEDANCE MODEL FOR HIGH POWER DIODES AND THYRISTORS By F. Profumo; A. Tenconi; S. Facelli; B. Passerini; A. Guerra	[View] [Download]
Abstract: In this paper a thermal model that allows to obtain the transient thermal impedance curve of high power diodes and thyristors is presented. The results obtained from the model are compared with the experimental measurements performed on the most diffused families of device packages. In the last section of the paper a method for predicting the transient junction temperature by using PSPICE is outlined. The method is based on the fitting of the transient thermal impedance curve with a finite series of exponential terms.

	A SYSTEMATIC APPROACH FOR TESTING TODAY'S POWER SEMICONDUCTORS TO OBTAIN A GENERALLY APPLICABLE CHARACTERIZATION By Andreas Lindemann	[View] [Download]
Abstract: New characterization and testing methods have been developed with respect to the state of the art in power semiconductors. Their knowledge and use is decisive for reliable and efficient simulation and design of power electronic converters. This paper shows principles of characterization in a systematic approach. Their meaning for component applications is derived. Furtherly testing methods to gain the required data are derived. Testers recently developed for characterization and quality assurance measurements and results obtained with them are presented. Thus this paper shows the links between characterization, testing and application for fast switching power semiconductors. It focusses on insulated gate bipolar transistors (IGBT) as typical devices of this type.

	EVALUATION AND MODELLING OF THE POWER LOSSES IN THE HORIZONTAL DEFLECTION CIRCUIT IN TELEVISIONS - WITH FOCUS ON THE SEMICONDUCTORS By Leo Ostergaard; Uffe B. Jensen	[View] [Download]
Abstract: This paper presents measurement and modelling results of the power losses in the horizontal deflection circuit in television receivers. By using the available component models in Saber™ it is shown that the characteristic quasi stationary shapes of the voltages and the currents can be achieved by simulations. The measured distribution of the power losses shows that the power diodes and the BJT are responsible for approximately 22% of the total power loss in the basic deflection circuit. The forward recovery causes the major part of the power loss in the power diode while the power loss in the BIT is mainly caused by the turnoff loss. A discussion of the BJT model and the diode models in Saber™ is given and the most suitable models for this application are chosen. From simulations and measurements, it is concluded that the power losses can be predicted by an accuracy of less than 5%.

	EVALUATION AND COMPARISON OF ENERGY LOSS IN REGENERATIVE AND NONLINEAR DISSIPATIVE SNUBBERS FOR BRIDGE LEGS By Deng Yan; Xiangning He; Zhaoming Qian; B. W. Williams	[View] [Download]
Abstract: A regenerative snubber recovers energy while a part of it is dissipated in the imperfect additional components. Nonlinear snubber is an alternative that reduces energy stored then reduces the total loss remarkably. A novel regenerative configuration and a dissipative one which employing both nonlinear reactors and capacitors are considered in the application of a 500V, 50A PWM voltage source inverter (VSI) phase leg. Design, evaluation and comparison of energy loss and recover efficiency have been done by Pspice simulation with experiment confirmation.

	A New Fault Tolerant Semiconductor Laser Triggering System for Light Trigger Thyristors By George Rost; Chika O. Nwankpa; Robert Fischl; Arye Rosen; Dean Gilbert; David Richardson	[View] [Download]
Abstract: This paper presents a new fault tolerant semiconductor laser driver system for light triggered thyristors. Our system features two semiconductor lasers, one laser is used for primary firing and the other is fired in the event of a failure, thus providing adequate redundancy.

	OPTIMISATION OF THE THERMAL METAL SPRAY PROCESS FOR THE MANUFACTURE OF MASS PRODUCED HYBRID INTEGRATED POWER ELECTRONIC CONVERTERS By P. A. Janse van Rensburg; J. D. van Wyk	[View] [Download]
Abstract: The thermal spray (THSP) process has proven to be a cost-effective and versatile manufacturing technology for hybrid integrated power electronic converters, and can make mass-production of integrated power electronic converters possible. One of the main drawbacks of the· process is the unpredictability of the quality of the sprayed layer with changes in process parameters. An experimental set-up has been devised to optimize the flame-spray process for sprayed copper as a conductive material for hybrid integrated power electronic converters.