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A SYSTEMATIC APPROACH FOR TESTING TODAY'S POWER SEMICONDUCTORS TO OBTAIN A GENERALLY APPLICABLE CHARACTERIZATION
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| Author(s) |
Andreas Lindemann |
| Abstract |
New characterization and testing methods have been developed with respect to the state of the art in power semiconductors. Their knowledge and use is decisive for reliable and efficient simulation and design of power electronic converters. This paper
shows principles of characterization in a systematic approach. Their meaning for component applications is derived. Furtherly testing methods to gain the required data are derived. Testers recently developed for characterization and quality assurance measurements
and results obtained with them are presented. Thus this paper shows the links between characterization, testing and application for fast switching power semiconductors. It focusses on insulated gate bipolar transistors (IGBT) as typical devices of this type. |
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| Filename: | Unnamed file |
| Filesize: | 518.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-03-15 by System |
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