EPE Association: EPE 1997 â€“ 51: Dialogue Session DS1d: HYBRID INTEGRATION

EPE 1997 â€“ 51: Dialogue Session DS1d: HYBRID INTEGRATION
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 â€“ 51: Dialogue Session DS1d: HYBRID INTEGRATION

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   ELECTROTHERMAL BEHAVIOUR OF AN IGBT CHIP DIRECTLY BRAZED ON A TWO PHASE HEAT EXCHANGER
By L. Meysenc; A. Bricard; S. RaÃ«l; C. Schaeffer; E. Brun-Baronnat [View]
[Download]

Abstract: Due to the increasing of the electrical performances of IGBT, the thermal environment becomes a major factor limitation of their performances. Two-phase heat exchangers are able to dissipate high power in reduced volumes, and seem to be well adapted for power component cooling. First, this paper describes the thermal calculation of such heat exchangers, then compares these estimations to measurements realized on a prototype. Finally, the thermal behaviour of this setup is analyzed.

   A NOVEL LOW-COST AND HIGH-RELIABILITY IGBT MODULE FOR GENERAL USE
By A. Tamba; M. Sasaki; S. Sekine; Y. Sonobe; K. Suzuki; K. Yamada; R. Saito; T. Terasaki; O. Suzuki; T. Shigemura [View]
[Download]

Abstract: A new packaging technology suitable for a low-cost and high-reliability IGBT (Insulated Gate Bipolar Transistor) module is proposed which can contribute to the proliferation of inverter systems, and attractive features of the proposed module are actually demonstrated. The proposed module structure employs a Cu-based molded case, a thin (0.28mm) Al2 0.3 substrate and electrically all-wire bonding connections. Only three processing steps, in which there are no adhesive or cleansing procedures, are required in the proposed fabrication process thanks to the Cu-based molded case. The steps are simultaneous soldering of all involved parts, wire bonding, and gel processing and cap snap-fitting. The thin Al2 0.3 substrate provides a low thermal resistance (0.3Â°C/W) comparable to that for an A/N substrate, and high reliability, i.e. endurance of more than 1300 heat cycles ( delta-T=165Â°C). A low surge voltage is achieved by the very small parasitic inductances due to the eddy current induced in the Cu-base from the arrangement of the electrodes adjacent to the Cu-base. The fabricated IGBT module is very promising as a key device for low-noise and low-cost inverter systems.

   A UNIVERSAL SMART CONTROL IC FOR HIGH-POWER IGBT APPLICATIONS
By R. Herzer; Ch. Bokeloh; J. Lehmann [View]
[Download]

Abstract: A new universal smart control IC for IGBT-Intelligent Power Modules (IPM) is presented. lt is usable for high-power applications (up to 1.700V and several hundred amperes) and frequencies up to 50kHz. The concept includes several driver, protection and monitor functions, such as a short pulse suppression, a mutual interlock of IGBTs and undervoltage moniloring of the operating voltage. an optional Vce-temperature- and current-monitoring of the IGBT and a common error processing. The potential separation and the specific gate driver stages are separate. The IC is designed and manufactured in a high voltage CMOS technology.

   SOME EXPERIENCES CONCERNING OF A STARTING AND SERVICE OF HIGH POWER IGBT CONVERTERS
By Stefan Januszewski; Henryk Swiatek; Krzysztof Zymmer [View]
[Download]

Abstract: IGBT failure mechanisms in service conditions are discussed. Investigations and results of IGBT module explosion strength tests are presented. A possibility of device package explosion is analysed. Experiences concerning of a starting, tests and service of high power IGBT converter are given. An appropriate overcurrent protection is proposed.

   INTELLIGENT INTEGRATED POWER FOR LOW POWER APPLICATIONS
By Katja Stengert, Christian GÃ¶bl [View]
[Download]

Abstract: MiniSKiiP (Mini SEMIKRON Integrated Intelligent Power) is a small, highly integrated building block which offers technical advantages such as increased contact reliability and increased load cycling capability due to pressure contact system. It is suited for various semiconductor devices and different circuits, it is very easy to mount and the simplicity and robustness of the construction leads to a high cost reduction of the entire system.

   DIELECTRIC CERAMIC TECHNOLOGY FOR HIGH POWER INTEGRATED HYBRID CONVERTERS
By J.D. van Wyk; C. K. Campbell; M. F. K. Holm [View]
[Download]

Abstract: Requirements for high power ceramic dielectric technology for hybrid planar integrated power electronic converters are formulated in terms of the high current, planar capability, as well as linear and nonlinear behaviour. Dielectric optimisation of the material is treated with these requirements in mind. The manufacturing of these materials is discussed, and the application in non-linear materials as snubbers and in linear materials in integrated resonant circuits shown.

   RELIABILITY OF HIGH POWER IGBT MODULES TESTING ON THERMAL FATIGUE EFFECTS DUE TO TRACTION CYCLES
By A. Hamidi; G. Coquery; R. Lallemand [View]
[Download]

Abstract: This paper is a fourth contribution of INRETS Coquery et al (6) (9) (13) on the topic of thermal fatigue of high power IGBT modules in traction working conditions. The results of accelerated power cycling tests on 36 1200V-400A IGBT modules and on one 600V-1200A module are discussed. A technological study is carried out to evaluate the effects of mechanical stresses due to power cycles. The two main failure modes observed after such cycles are, on the one hand, the increase of collector emitter drop voltage (Vce) as a result of wire bond lift-off or chip metallisation degradation, and on the other hand, the increase of thermal resistance due to delamination in the solder between different layers.

   HYBRID POWER MODULE, A GOOD AND VERSATILE POWER MANAGEMENT
By Philippe Perruchoud; Pierre AloÃ¯si [View]
[Download]

Abstract: System partitioning will be one of the main focus in the next coming years. The first solutions are: integration of signal elements, High Voltage Integrated Circuit and "Smart Power" (signal with power switch on same die). Hybrid packages are also good potential solutions. In the following paper, the optimum design for this technology will be developed with the target of a good performance to cost ratio.

   TECHNOLOGY FOR PLANAR INTEGRATED OUTPUT FILTERS FOR HYBRIDS
By S. J. Marais; J. A. Ferreira; J. D. van Wyk [View]
[Download]

Abstract: Switch-mode power supplies are currently manufactured by interconnecting various discrete components. The discrete interconnection method has distinct disadvantages and as is the case with consumer electronics functional blocks of a converter must be constructed as a whole before improvements on various levels can be expected. In this paper the technology used in construction and manufacturing of an integrated ceramic planar output filter is discussed and experimental results are presented.

   SWITCHING PERFORMANCE AND EMI NOISE GENERATION OF A CHOPPER ON INSULATED METAL SUBSTRATE
By W. Teulings; J.L. Schanen; J. Roudet [View]
[Download]

Abstract: Stray Inductance and Capacitance of the interconnects of a chopper on Insulated Metal Substrate (IMS) are evaluated and compared to those of classical PCB. Interconnect modeling is performed with the PEEC method, implemented on CAD tool InCa. PSPICE simulation of the overall model of the converter, the LISN, and the interconnects leads to realistic switching waveforms, and permits to quantify conducted EMI noise. Both switching waveforms and conducted noise spectra are compared to measurements.

EPE 1997 â€“ 51: Dialogue Session DS1d: HYBRID INTEGRATION
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 â€“ 51: Dialogue Session DS1d: HYBRID INTEGRATION
	[return to parent folder]

	ELECTROTHERMAL BEHAVIOUR OF AN IGBT CHIP DIRECTLY BRAZED ON A TWO PHASE HEAT EXCHANGER By L. Meysenc; A. Bricard; S. RaÃ«l; C. Schaeffer; E. Brun-Baronnat	[View] [Download]
Abstract: Due to the increasing of the electrical performances of IGBT, the thermal environment becomes a major factor limitation of their performances. Two-phase heat exchangers are able to dissipate high power in reduced volumes, and seem to be well adapted for power component cooling. First, this paper describes the thermal calculation of such heat exchangers, then compares these estimations to measurements realized on a prototype. Finally, the thermal behaviour of this setup is analyzed.

	A NOVEL LOW-COST AND HIGH-RELIABILITY IGBT MODULE FOR GENERAL USE By A. Tamba; M. Sasaki; S. Sekine; Y. Sonobe; K. Suzuki; K. Yamada; R. Saito; T. Terasaki; O. Suzuki; T. Shigemura	[View] [Download]
Abstract: A new packaging technology suitable for a low-cost and high-reliability IGBT (Insulated Gate Bipolar Transistor) module is proposed which can contribute to the proliferation of inverter systems, and attractive features of the proposed module are actually demonstrated. The proposed module structure employs a Cu-based molded case, a thin (0.28mm) Al2 0.3 substrate and electrically all-wire bonding connections. Only three processing steps, in which there are no adhesive or cleansing procedures, are required in the proposed fabrication process thanks to the Cu-based molded case. The steps are simultaneous soldering of all involved parts, wire bonding, and gel processing and cap snap-fitting. The thin Al2 0.3 substrate provides a low thermal resistance (0.3Â°C/W) comparable to that for an A/N substrate, and high reliability, i.e. endurance of more than 1300 heat cycles ( delta-T=165Â°C). A low surge voltage is achieved by the very small parasitic inductances due to the eddy current induced in the Cu-base from the arrangement of the electrodes adjacent to the Cu-base. The fabricated IGBT module is very promising as a key device for low-noise and low-cost inverter systems.

	A UNIVERSAL SMART CONTROL IC FOR HIGH-POWER IGBT APPLICATIONS By R. Herzer; Ch. Bokeloh; J. Lehmann	[View] [Download]
Abstract: A new universal smart control IC for IGBT-Intelligent Power Modules (IPM) is presented. lt is usable for high-power applications (up to 1.700V and several hundred amperes) and frequencies up to 50kHz. The concept includes several driver, protection and monitor functions, such as a short pulse suppression, a mutual interlock of IGBTs and undervoltage moniloring of the operating voltage. an optional Vce-temperature- and current-monitoring of the IGBT and a common error processing. The potential separation and the specific gate driver stages are separate. The IC is designed and manufactured in a high voltage CMOS technology.

	SOME EXPERIENCES CONCERNING OF A STARTING AND SERVICE OF HIGH POWER IGBT CONVERTERS By Stefan Januszewski; Henryk Swiatek; Krzysztof Zymmer	[View] [Download]
Abstract: IGBT failure mechanisms in service conditions are discussed. Investigations and results of IGBT module explosion strength tests are presented. A possibility of device package explosion is analysed. Experiences concerning of a starting, tests and service of high power IGBT converter are given. An appropriate overcurrent protection is proposed.

	INTELLIGENT INTEGRATED POWER FOR LOW POWER APPLICATIONS By Katja Stengert, Christian GÃ¶bl	[View] [Download]
Abstract: MiniSKiiP (Mini SEMIKRON Integrated Intelligent Power) is a small, highly integrated building block which offers technical advantages such as increased contact reliability and increased load cycling capability due to pressure contact system. It is suited for various semiconductor devices and different circuits, it is very easy to mount and the simplicity and robustness of the construction leads to a high cost reduction of the entire system.

	DIELECTRIC CERAMIC TECHNOLOGY FOR HIGH POWER INTEGRATED HYBRID CONVERTERS By J.D. van Wyk; C. K. Campbell; M. F. K. Holm	[View] [Download]
Abstract: Requirements for high power ceramic dielectric technology for hybrid planar integrated power electronic converters are formulated in terms of the high current, planar capability, as well as linear and nonlinear behaviour. Dielectric optimisation of the material is treated with these requirements in mind. The manufacturing of these materials is discussed, and the application in non-linear materials as snubbers and in linear materials in integrated resonant circuits shown.

	RELIABILITY OF HIGH POWER IGBT MODULES TESTING ON THERMAL FATIGUE EFFECTS DUE TO TRACTION CYCLES By A. Hamidi; G. Coquery; R. Lallemand	[View] [Download]
Abstract: This paper is a fourth contribution of INRETS Coquery et al (6) (9) (13) on the topic of thermal fatigue of high power IGBT modules in traction working conditions. The results of accelerated power cycling tests on 36 1200V-400A IGBT modules and on one 600V-1200A module are discussed. A technological study is carried out to evaluate the effects of mechanical stresses due to power cycles. The two main failure modes observed after such cycles are, on the one hand, the increase of collector emitter drop voltage (Vce) as a result of wire bond lift-off or chip metallisation degradation, and on the other hand, the increase of thermal resistance due to delamination in the solder between different layers.

	HYBRID POWER MODULE, A GOOD AND VERSATILE POWER MANAGEMENT By Philippe Perruchoud; Pierre AloÃ¯si	[View] [Download]
Abstract: System partitioning will be one of the main focus in the next coming years. The first solutions are: integration of signal elements, High Voltage Integrated Circuit and "Smart Power" (signal with power switch on same die). Hybrid packages are also good potential solutions. In the following paper, the optimum design for this technology will be developed with the target of a good performance to cost ratio.

	TECHNOLOGY FOR PLANAR INTEGRATED OUTPUT FILTERS FOR HYBRIDS By S. J. Marais; J. A. Ferreira; J. D. van Wyk	[View] [Download]
Abstract: Switch-mode power supplies are currently manufactured by interconnecting various discrete components. The discrete interconnection method has distinct disadvantages and as is the case with consumer electronics functional blocks of a converter must be constructed as a whole before improvements on various levels can be expected. In this paper the technology used in construction and manufacturing of an integrated ceramic planar output filter is discussed and experimental results are presented.

	SWITCHING PERFORMANCE AND EMI NOISE GENERATION OF A CHOPPER ON INSULATED METAL SUBSTRATE By W. Teulings; J.L. Schanen; J. Roudet	[View] [Download]
Abstract: Stray Inductance and Capacitance of the interconnects of a chopper on Insulated Metal Substrate (IMS) are evaluated and compared to those of classical PCB. Interconnect modeling is performed with the PEEC method, implemented on CAD tool InCa. PSPICE simulation of the overall model of the converter, the LISN, and the interconnects leads to realistic switching waveforms, and permits to quantify conducted EMI noise. Both switching waveforms and conducted noise spectra are compared to measurements.