| Abstract |
A new packaging technology suitable for a low-cost and high-reliability IGBT (Insulated Gate Bipolar Transistor) module is proposed which can contribute to the proliferation of inverter systems, and attractive features of the proposed module are actually demonstrated. The proposed module structure employs a Cu-based
molded case, a thin (0.28mm) Al2 0.3 substrate and electrically all-wire bonding connections. Only three
processing steps, in which there are no adhesive or cleansing procedures, are required in the proposed fabrication
process thanks to the Cu-based molded case. The steps are simultaneous soldering of all involved parts, wire bonding, and gel processing and cap snap-fitting. The thin Al2 0.3 substrate provides a low thermal resistance (0.3°C/W) comparable to that for an A/N substrate, and high reliability, i.e. endurance of more than 1300 heat cycles ( delta-T=165°C). A low surge voltage is achieved by the very small parasitic inductances due to the eddy current induced in the Cu-base from the arrangement of the electrodes adjacent to the Cu-base. The fabricated IGBT module is very promising as a key device for low-noise and low-cost inverter systems. |
