EPE Association: EPE 1997 – 21: Lecture Session L6a: DEVICES AND MODELING

EPE 1997 – 21: Lecture Session L6a: DEVICES AND MODELING
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 21: Lecture Session L6a: DEVICES AND MODELING

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   SIMULATION / OPTIMIZATION OF IC VDMOS LAYOUT-DEPENDENT ELECTROSTATICS
By R. Thoma; J. Victory; J. Buxo; T. Zirkle; I. Pages; P. Raguet [View]
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Abstract: The SPICE-model published by Victory et al. was improved for circuit simulation and optimization of high performance large area vertical DMOS (VDMOS) devices. This model is based on an exact analytical approach derived from the underlying electrostatic principles. It can handle various types of new layouts in two metal layers and compares well with measurements and more detailed numerical simulations. The latter simulations were perforn1ed in a 3D Poisson Equation solver and included all the details of the 2D layout of both metal layers as well as parasitic effects due to the bond wires of the package.

   A DISTRIBUTED MODEL OF IGBTs FOR CIRCUIT SIMULATION
By Ph. Leturcq; J-L Debrie; M. O. Berraies [View]
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Abstract: The carrier diffusion equation which retains the distributed nature of charge dynamics in power bipolar devices can be solved by means of an electrical analogy. The paper presents the physical basis of the new modelling approach thus allowed, and its implementation in the case of IGBTs.

   Axial Recombination Centre Technology for Freewheeling Diodes
By J. Lutz [View]
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Abstract: This paper shows experimental results for all important parameters of a FWD using different recombination centres: Gold, platinum, and radiation-induced centres. A well defined axial profile of radiation-induced centres gives better trade-off between forward voltage drop and reverse recovery current peak IRRM compared to platinum and even to gold. Soft-recovery for aPT-diode design is shown, leading to lower losses.

   PROTON IRRADIATED 6 kV GTO WITH FULL PRESSURE CONTACTS
By A.I. Prikhodko; A.M. Surma [View]
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Abstract: Asymmetrical 6 kV, 1000 A reverse blocking GTO is developed. Proton irradiation and alloy free construction provide improvement of switching perfomances in combine with usual range of on-state voltage. Device structure and characteristics are presented.

   SWITCHING BEHAVIOUR OF DIODES BASED ON NEW SEMICONDUCTOR MATERIALS AND SILICON - A COMPARATIVE STUDY
By M. Bruckmann; E. Baudelot; B. Weis; H. Mitlehner [View]
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Abstract: Three diodes for high voltage applications based on different semiconductor materials have been investigated. In contrast to the state of the art silicon diode the new materials offer interesting possibilities for future inverters. A calculation shows how far the losses in the switching clement of a chopper circuit can be reduced with reduction of stored charge in the freewheeling diode. Diodes fabricated from Silicon (l200V). Gallium Arsenide (600V.1000V) and Silicon Carbide (1200V) are compared in the same switching conditions. The silicon diode exhibits greatly increased stored charge at high temperature. The gallium arsenide diode shows, due to its pin structure, a small but nearly temperature independent recovery charge. The silicon carbide schottky diode has only a small capacitive current even at high current densities and temperatures.

EPE 1997 – 21: Lecture Session L6a: DEVICES AND MODELING
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 21: Lecture Session L6a: DEVICES AND MODELING
	[return to parent folder]

	SIMULATION / OPTIMIZATION OF IC VDMOS LAYOUT-DEPENDENT ELECTROSTATICS By R. Thoma; J. Victory; J. Buxo; T. Zirkle; I. Pages; P. Raguet	[View] [Download]
Abstract: The SPICE-model published by Victory et al. was improved for circuit simulation and optimization of high performance large area vertical DMOS (VDMOS) devices. This model is based on an exact analytical approach derived from the underlying electrostatic principles. It can handle various types of new layouts in two metal layers and compares well with measurements and more detailed numerical simulations. The latter simulations were perforn1ed in a 3D Poisson Equation solver and included all the details of the 2D layout of both metal layers as well as parasitic effects due to the bond wires of the package.

	A DISTRIBUTED MODEL OF IGBTs FOR CIRCUIT SIMULATION By Ph. Leturcq; J-L Debrie; M. O. Berraies	[View] [Download]
Abstract: The carrier diffusion equation which retains the distributed nature of charge dynamics in power bipolar devices can be solved by means of an electrical analogy. The paper presents the physical basis of the new modelling approach thus allowed, and its implementation in the case of IGBTs.

	Axial Recombination Centre Technology for Freewheeling Diodes By J. Lutz	[View] [Download]
Abstract: This paper shows experimental results for all important parameters of a FWD using different recombination centres: Gold, platinum, and radiation-induced centres. A well defined axial profile of radiation-induced centres gives better trade-off between forward voltage drop and reverse recovery current peak IRRM compared to platinum and even to gold. Soft-recovery for aPT-diode design is shown, leading to lower losses.

	PROTON IRRADIATED 6 kV GTO WITH FULL PRESSURE CONTACTS By A.I. Prikhodko; A.M. Surma	[View] [Download]
Abstract: Asymmetrical 6 kV, 1000 A reverse blocking GTO is developed. Proton irradiation and alloy free construction provide improvement of switching perfomances in combine with usual range of on-state voltage. Device structure and characteristics are presented.

	SWITCHING BEHAVIOUR OF DIODES BASED ON NEW SEMICONDUCTOR MATERIALS AND SILICON - A COMPARATIVE STUDY By M. Bruckmann; E. Baudelot; B. Weis; H. Mitlehner	[View] [Download]
Abstract: Three diodes for high voltage applications based on different semiconductor materials have been investigated. In contrast to the state of the art silicon diode the new materials offer interesting possibilities for future inverters. A calculation shows how far the losses in the switching clement of a chopper circuit can be reduced with reduction of stored charge in the freewheeling diode. Diodes fabricated from Silicon (l200V). Gallium Arsenide (600V.1000V) and Silicon Carbide (1200V) are compared in the same switching conditions. The silicon diode exhibits greatly increased stored charge at high temperature. The gallium arsenide diode shows, due to its pin structure, a small but nearly temperature independent recovery charge. The silicon carbide schottky diode has only a small capacitive current even at high current densities and temperatures.