| |
SWITCHING BEHAVIOUR OF DIODES BASED ON NEW SEMICONDUCTOR MATERIALS AND SILICON - A COMPARATIVE STUDY
| [View]
[Download]
|
| Author(s) |
M. Bruckmann; E. Baudelot; B. Weis; H. Mitlehner |
| Abstract |
Three diodes for high voltage applications based on different semiconductor materials have been investigated. In contrast to the state of the art silicon diode the new materials offer interesting possibilities for future inverters.
A calculation shows how far the losses in the switching clement of a chopper circuit can be reduced with reduction of stored charge in the freewheeling diode.
Diodes fabricated from Silicon (l200V). Gallium Arsenide (600V.1000V) and Silicon Carbide (1200V) are compared in the same switching conditions.
The silicon diode exhibits greatly increased stored charge at high temperature.
The gallium arsenide diode shows, due to its pin structure, a small but nearly temperature independent recovery charge.
The silicon carbide schottky diode has only a small capacitive current even at high current densities and temperatures. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 403.7 KB |
|
| Type |
Members Only |
| Date |
Last modified 2016-02-11 by System |
| |
 |