EPE Association: EPE 1997 – 17: Lecture Session L5a: CHARACTERIZATION AND APPLICATIONS

EPE 1997 – 17: Lecture Session L5a: CHARACTERIZATION AND APPLICATIONS
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 17: Lecture Session L5a: CHARACTERIZATION AND APPLICATIONS

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   PROBLEM OF MECHANICAL STRENGTH IN ELECTRONICS
By V. Roizman; N. Nester [View]
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Abstract: On the basis of the accumulated experience in the study and elimination of strength defects of full-scale products of electronics or their failures due to mechanical effects, the paper analyses the problems of mechanical strength when designing, making, and testing these products including Power Electronics. The theoretical and experimental studies of static and dynamic strength of typical components under operating conditions and avionics structures are given.

   A NEW INTELLIGENT GATE CONTROL SCHEME TO FIVE AND PROTECT HIGH POWER IGBTs
By H. G. Lee, Y. H. Lee; B. S. Suh; D. S. Hyun; J. W. Lee [View]
[Download]

Abstract: This paper proposes a new gate drive circuit for IGBTs which can actively suppress tl1e voltage overshoot across the driven IGBT at turn-off and the voltage overshoot across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the fault collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-exuitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

   MEASUREMENT OF CHIP CURRENTS IN IGBT MODULES
By P.R. Palmer; J.C. Joyce; B.H. Stark [View]
[Download]

Abstract: IGBT modules employ a number of chips connected in parallel. Measurement of the effects on chip currents of layout topology and variations in chip parameters and temperatures requires a non-invasive current measurement system. Such a system, based on magnetic field measurements, has been used here to show that the steady-state current shming between chips is not ideal, and is exacerbated by uneven temperatures. Transient cunent redistribution also occurs at turn off. Thermal imaging was canied out to confirm the effects of this current redistribution in IGBT modules. It is shown that a significant temperature difference may be expected. The combination of the effects occurring is discussed, and it is concluded that further work is necessary regarding the matching of chips for reliable operation under certain load conditions.

   EVALUATION OF HIGH POWER IGBTs FOR TRACTION APPLICATIONS
By M. A. Hollander; G. E. Zetterberg [View]
[Download]

Abstract: This paper describes a test circuit for high power IGBTs, aimed for traction applications. A typical application for the IGBTs is Metro cars with 750V or 1500V DC supply. The test circuit is used for application oriented type-tests of IGBT modules. Also the calculation program TULIP, which calculates power losses and junction temperatures of semiconductors in a three-phase inverter is described.

EPE 1997 – 17: Lecture Session L5a: CHARACTERIZATION AND APPLICATIONS
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 17: Lecture Session L5a: CHARACTERIZATION AND APPLICATIONS
	[return to parent folder]

	PROBLEM OF MECHANICAL STRENGTH IN ELECTRONICS By V. Roizman; N. Nester	[View] [Download]
Abstract: On the basis of the accumulated experience in the study and elimination of strength defects of full-scale products of electronics or their failures due to mechanical effects, the paper analyses the problems of mechanical strength when designing, making, and testing these products including Power Electronics. The theoretical and experimental studies of static and dynamic strength of typical components under operating conditions and avionics structures are given.

	A NEW INTELLIGENT GATE CONTROL SCHEME TO FIVE AND PROTECT HIGH POWER IGBTs By H. G. Lee, Y. H. Lee; B. S. Suh; D. S. Hyun; J. W. Lee	[View] [Download]
Abstract: This paper proposes a new gate drive circuit for IGBTs which can actively suppress tl1e voltage overshoot across the driven IGBT at turn-off and the voltage overshoot across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the fault collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-exuitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

	MEASUREMENT OF CHIP CURRENTS IN IGBT MODULES By P.R. Palmer; J.C. Joyce; B.H. Stark	[View] [Download]
Abstract: IGBT modules employ a number of chips connected in parallel. Measurement of the effects on chip currents of layout topology and variations in chip parameters and temperatures requires a non-invasive current measurement system. Such a system, based on magnetic field measurements, has been used here to show that the steady-state current shming between chips is not ideal, and is exacerbated by uneven temperatures. Transient cunent redistribution also occurs at turn off. Thermal imaging was canied out to confirm the effects of this current redistribution in IGBT modules. It is shown that a significant temperature difference may be expected. The combination of the effects occurring is discussed, and it is concluded that further work is necessary regarding the matching of chips for reliable operation under certain load conditions.

	EVALUATION OF HIGH POWER IGBTs FOR TRACTION APPLICATIONS By M. A. Hollander; G. E. Zetterberg	[View] [Download]
Abstract: This paper describes a test circuit for high power IGBTs, aimed for traction applications. A typical application for the IGBTs is Metro cars with 750V or 1500V DC supply. The test circuit is used for application oriented type-tests of IGBT modules. Also the calculation program TULIP, which calculates power losses and junction temperatures of semiconductors in a three-phase inverter is described.