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A NEW INTELLIGENT GATE CONTROL SCHEME TO FIVE AND PROTECT HIGH POWER IGBTs
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| Author(s) |
H. G. Lee, Y. H. Lee; B. S. Suh; D. S. Hyun; J. W. Lee |
| Abstract |
This paper proposes a new gate drive circuit for IGBTs which can actively suppress tl1e voltage overshoot across the driven IGBT at turn-off and the voltage overshoot across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the fault collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-exuitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit. |
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| Filename: | Unnamed file |
| Filesize: | 541.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-02-05 by System |
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