EPE Association: EPE 2014 - LS4b: Wide Band gap devices

EPE 2014 - LS4b: Wide Band gap devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2014 ECCE Europe - Conference > EPE 2014 - Topic 01: Devices, Packaging and System Integration > EPE 2014 - LS4b: Wide Band gap devices

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   An Experimental Study of Switching GaN FETs in Coaxial Transmission Line
By Andrew JOANNOU, Jacobus Daniel VAN WYK, David PENTZ [View]
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Abstract: The switching characteristics of GaN FETs have not yet been measured accurately because of their small electromagnetic size in relation to the circuit and the electromagnetic environment the measurements are exposed to. Switching GaN FETs in a transmission line will allow for measurements to be taken in an electromagnetically defined environment. The transmission line is adapted to take optimum measurements. This is proven by the waveforms presented.

   Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications
By Richard REINER, Rüdiger QUAY, Patrick WALTEREIT, Stefan MÜLLER, Fouad BENKHELIFA, Michael MIKULLA, Michael SCHLECHTWEG, Oliver AMBACHER, Beatrix WEISS [View]
[Download]

Abstract: AlGaN/GaN-on-Si Heterostructure Field-Effect Transistors (HFETs) for power switching areinvestigated in this paper. A design study for a fast switching environment for power devices isprovided including an analysis of the technology, the fabrication, and the performances of large-areaAlGaN/GaN-on-Si HFETs. Different power packages and high-current drivers are compared and theresults are being discussed. Furthermore the power conversion efficiency is being evaluated fordifferent power- and switching-frequency ranges by means of a converter test board. At 100 kHzefficiencies up to 98.7 \% at power levels of up to 1.6 kW could be achieved. At 1 MHz and 1 kWinput power an efficiency of 97.1 \% was measured.

   Circuit Mismatch Influence on Performance of Paralleling Silicon Carbide MOSFETs
By Helong LI, Stig MUNK-NIELSEN, Cam PHAM, Szymon BECZKOWSKI [View]
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Abstract: This paper focuses on circuit mismatch influence on performance of paralleling SiC MOSFETs. Power circuit mismatch and gate driver mismatch influences are analyzed in detail. Simulation and experiment results show the influence of circuit mismatch and verify the analysis. This paper aims to give suggestions on paralleling discrete SiC MOSFETs and designing layout of power modules with paralleled SiC MOSFETs dies.

   Novel Solutions for suppressing Parasitic Turn-on behaviour on Lateral Vertical JFETs
By Erik VELANDER, Andreas LÖFGREN, Karsten KRETSCHMAR, Hans-Peter NEE [View]
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Abstract: The SiC (LV-JFET) has several advantages as a switch component in frequency converters. One challenge, when using the component at high switching speed is the coupled unwanted turn-on of the complementary switch, called parasitic turn-on. This paper presents three different novel solutions to suppress parasitic turn-on for a module design on the gate-drive-unit level. Measurements and improvements results on two of the solutions are presented. The paper shows that the losses could be significantly decreased by active current sources and the proposed clamping solution.

EPE 2014 - LS4b: Wide Band gap devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2014 ECCE Europe - Conference > EPE 2014 - Topic 01: Devices, Packaging and System Integration > EPE 2014 - LS4b: Wide Band gap devices
	[return to parent folder]

	An Experimental Study of Switching GaN FETs in Coaxial Transmission Line By Andrew JOANNOU, Jacobus Daniel VAN WYK, David PENTZ	[View] [Download]
Abstract: The switching characteristics of GaN FETs have not yet been measured accurately because of their small electromagnetic size in relation to the circuit and the electromagnetic environment the measurements are exposed to. Switching GaN FETs in a transmission line will allow for measurements to be taken in an electromagnetically defined environment. The transmission line is adapted to take optimum measurements. This is proven by the waveforms presented.

	Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications By Richard REINER, Rüdiger QUAY, Patrick WALTEREIT, Stefan MÜLLER, Fouad BENKHELIFA, Michael MIKULLA, Michael SCHLECHTWEG, Oliver AMBACHER, Beatrix WEISS	[View] [Download]
Abstract: AlGaN/GaN-on-Si Heterostructure Field-Effect Transistors (HFETs) for power switching areinvestigated in this paper. A design study for a fast switching environment for power devices isprovided including an analysis of the technology, the fabrication, and the performances of large-areaAlGaN/GaN-on-Si HFETs. Different power packages and high-current drivers are compared and theresults are being discussed. Furthermore the power conversion efficiency is being evaluated fordifferent power- and switching-frequency ranges by means of a converter test board. At 100 kHzefficiencies up to 98.7 \% at power levels of up to 1.6 kW could be achieved. At 1 MHz and 1 kWinput power an efficiency of 97.1 \% was measured.

	Circuit Mismatch Influence on Performance of Paralleling Silicon Carbide MOSFETs By Helong LI, Stig MUNK-NIELSEN, Cam PHAM, Szymon BECZKOWSKI	[View] [Download]
Abstract: This paper focuses on circuit mismatch influence on performance of paralleling SiC MOSFETs. Power circuit mismatch and gate driver mismatch influences are analyzed in detail. Simulation and experiment results show the influence of circuit mismatch and verify the analysis. This paper aims to give suggestions on paralleling discrete SiC MOSFETs and designing layout of power modules with paralleled SiC MOSFETs dies.

	Novel Solutions for suppressing Parasitic Turn-on behaviour on Lateral Vertical JFETs By Erik VELANDER, Andreas LÖFGREN, Karsten KRETSCHMAR, Hans-Peter NEE	[View] [Download]
Abstract: The SiC (LV-JFET) has several advantages as a switch component in frequency converters. One challenge, when using the component at high switching speed is the coupled unwanted turn-on of the complementary switch, called parasitic turn-on. This paper presents three different novel solutions to suppress parasitic turn-on for a module design on the gate-drive-unit level. Measurements and improvements results on two of the solutions are presented. The paper shows that the losses could be significantly decreased by active current sources and the proposed clamping solution.