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Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications
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| Author(s) |
Richard REINER, Rüdiger QUAY, Patrick WALTEREIT, Stefan MÜLLER, Fouad BENKHELIFA, Michael MIKULLA, Michael SCHLECHTWEG, Oliver AMBACHER, Beatrix WEISS |
| Abstract |
AlGaN/GaN-on-Si Heterostructure Field-Effect Transistors (HFETs) for power switching areinvestigated in this paper. A design study for a fast switching environment for power devices isprovided including an analysis of the technology, the fabrication, and the performances of large-areaAlGaN/GaN-on-Si HFETs. Different power packages and high-current drivers are compared and theresults are being discussed. Furthermore the power conversion efficiency is being evaluated fordifferent power- and switching-frequency ranges by means of a converter test board. At 100 kHzefficiencies up to 98.7 \% at power levels of up to 1.6 kW could be achieved. At 1 MHz and 1 kWinput power an efficiency of 97.1 \% was measured. |
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| Filename: | 0090-epe2014-full-17504966.pdf |
| Filesize: | 698.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2015-06-08 by System |
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