Please enter the words you want to search for:

 EPE 2014 - LS3b: Packaging and System Integration 
 You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2014 ECCE Europe - Conference > EPE 2014 - Topic 01: Devices, Packaging and System Integration > EPE 2014 - LS3b: Packaging and System Integration 
   [return to parent folder]  
 
   A Drive-by-Microwave Isolated Gate Driver with Gate Current Charge for IGBTs 
 By Shuichi NAGAI, Yasufumi KAWAI, OSAMU TABATA, HIDEAKI FUJIWARA, Noboru NEGORO, Masahiro ISHIDA, Nobuyuki OTSUKA 
 [View] 
 [Download] 
Abstract: A new isolated gate driver with Drive-by-Microwave (DBM) technology is presented, which drives an IGBT without an isolated power supply by switching the charged current through a microwave wireless power transmission. The fabricated compact DBM gate driver outputs an isolated 15V voltage and successfully demonstrated the IGBT drive with a 100 kHz. Furthermore, the fabricated DBM gate driver realized a 100V and 5.0MHz switching of a GaN power device without photo couplers and bulky transformers.

 
   A Modular Integrated Li-ion Battery Pack with a Multi-Core Based Transformer Isolated Bidirectional DC-DC Converter 
 By YU DU, A. Q. HUANG, FEI XUE, RUIYANG YU 
 [View] 
 [Download] 
Abstract: The paper presented a new energy storage device based on low-voltage (12.8V) Li-ion battery pack with an embedded DC-DC converter. The batteries and converter are packaged together. The integrated battery pack can be directly connected to high-voltage (400V) DC grid, enabling a modular approach for battery energy storage systems.

 
   Packaging for Power Semiconductors Based on the 3D Printing Technology Selective Laser Melting 
 By Marcus CONRAD, Maximilian SCHNIEDENHARN, Andrei DIATLOV, Rik DE DONCKER 
 [View] 
 [Download] 
Abstract: In this paper a new packaging technique based on Selective Laser Melting is presented which tries to replace solder or sinter layers, respectively bond wires. Following the intended contact geometry and concept, simulations show the influence of the contact geometry on the thermo-mechanical stress the device is committed to. First investigations on the constraints of the production process are represented. Finally the feasibility of the proposed packaging technique is shown.

 
   System Design for Junction Temperatures up to 200°C 
 By Tobias KRONE, Thies KÖNEKE, Axel MERTENS 
 [View] 
 [Download] 
Abstract: Manufacturers of power semiconductors and modules intend to rate the maximum junctiontemperature up to 200°C. This results in higher temperatures at other components of the invertersystem as well. In this paper, it is presented a method to identify thermal constraints in an inverterdesign by combining analytical and numerical analysis of the thermal spreading. Furthermore, anoverview of the thermal limits of the inverters components is given. The resulting thermal constraintsof an air-cooled system are discussed, and it is introduced an inverter design to avoid overtemperatures.Finally, the test results achieved from the constructed inverter at 200°C junctiontemperature are presented.