EPE Association: EPE 2014

EPE 2014 - LS6b: IGBTs
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2014 ECCE Europe - Conference > EPE 2014 - Topic 01: Devices, Packaging and System Integration > EPE 2014 - LS6b: IGBTs

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   A 50 kW IGBT Power Module for Automotive Applications with Extremely Low DC-Link Inductance
By Christoph NEEB, Lars BOETTCHER, Jakob TEICHRIB, Andreas OSTMANN, Rik DE DONCKER [View]
[Download]

Abstract: A power module for hybrid electric vehicles is designed and constructed applying innovative packaging technologies. Instead of a DCB (direct copper bond) substrate and bond wire connections PCB (printed circuit board) technologies with embedded power semiconductors are used to build a 50kW automotive drive train inverter (Power PCB). The PCB technologies enable the design of very flat, compact and low-inductive power modules. The thermal performance of these modules is comparable to conventional DCB solutions.The built Power PCB is proven to be far superior compared to an equivalent bond wire solution in terms of switching performance. In fact, the parasitic dc-link inductance can be drastically reduced from 15.4nH (standard) down to 2.8nH (Power PCB). Thereby, the turn-off overvoltages are decreased significantly. Consequently, the switching losses are reduced and also conduction losses can be potentially reduced by an optional increase of the dc-link voltage. Thereby, the energy efficiency of electric vehicles can be substantially enhanced.

   Avalanche Ruggedness of 800V Lateral IGBTs in Bulk Si
By Gianluca CAMUSO, Nishad UDUGAMPOLA, Vasantha PATHIRANA, Tanya TRAJKOVIC, Florin UDREA [View]
[Download]

Abstract: Avalanche capability of 800V rated Lateral IGBTs (LIGBTs) fabricated using bulk CMOS technology has been investigated for the first time for both turn-on and turn-off. The LIGBTs have been designed for 65kHz operation in energy-efficient, compact off-line power supplies. Measurements of the device during turn-on revealed failures under high line voltages. The device was analysed using a combination of measurements and simulations which revealed that the dynamic avalanche was the cause of failure. An optimised LIGBT has been designed, simulated, fabricated and tested. The optimised device exhibits higher breakdown voltage and improved turn-on avalanche capability. Moreover, the optimised device showed improved avalanche capability during turn-off and reduced likelihood of latch-up.

   Modeling of Turn-Off Switching Energy in IGBT Controlled Silicon PiN Diodes
By SAEED JAHDI, Olayiwola ALATISE, Philip MAWBY [View]
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Abstract: Silicon PiN diodes are the most widely used rectifying technology in industry especially in voltage source converters. The PiN diodes are usually used as anti-parallel diodes across silicon IGBTs where they conduct current in the reverse direction as the current commutates between the phases of the converter. They tend to generate a considerable amount of energy losses during the turn-off transient due to the reverse recovery characteristics. The rate at which the diode is switched will determine the switching energy and will affect EMI, electrothermal stresses and reliability. Hence, it is vital to be able to predict the switching energy of the diode during its turn-off transient given the switching conditions so as to have a realistic approach towards predicting the operating temperature. The switching energy of PiN diodes is determined by the peak reverse recovery current, the peak diode voltage overshoot, the time displacement between them as well as the temperature dependency of these peaks. In this paper, a model is presented and validated over a temperature range of -75°C to 175°C and with switching speeds (dI/dt) modulated by the gate resistance on the low side IGBT ranging from 10 #937; to 1000 #937;. Comparisons show consistency between model prediction and measurements result. The model is a novel method of accurately predicting the switching energy of PiN diodes at different switching rates and temperatures using the measurements of a single switching rate at different temperatures.

   The Next Generation High Voltage IGBT Modules utilizing Enhanced-Trench ET-IGBTs and Field Charge Extraction FCE-Diodes
By Maxi ANDENNA, Sven MATTHIAS, Chiara CORVASCE, Yoichi OTANI, Silvan GEISSMANN, Arnost KOPTA, Munaf RAHIMO [View]
[Download]

Abstract: In this paper, we present the next generation of IGBT modules employing the latest Enhanced Trench ET-IGBT and Field Charge Extraction FCE fast diode devices. Such technologies enable high power IGBT modules to be capable of providing higher level of electrical performance in terms of low losses, good controllability, high robustness and soft diode reverse recovery. The first prototype dual modules with the new chip technologies rated at 300A and 3300V were fabricated and tested. The paper will present in detail the ET-IGBT and FCE diode concepts, the full static and dynamic electrical test results and their impact for achieving higher levels of performance in future power electronics applications.

EPE 2014 - LS6b: IGBTs
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2014 ECCE Europe - Conference > EPE 2014 - Topic 01: Devices, Packaging and System Integration > EPE 2014 - LS6b: IGBTs
	[return to parent folder]

	A 50 kW IGBT Power Module for Automotive Applications with Extremely Low DC-Link Inductance By Christoph NEEB, Lars BOETTCHER, Jakob TEICHRIB, Andreas OSTMANN, Rik DE DONCKER	[View] [Download]
Abstract: A power module for hybrid electric vehicles is designed and constructed applying innovative packaging technologies. Instead of a DCB (direct copper bond) substrate and bond wire connections PCB (printed circuit board) technologies with embedded power semiconductors are used to build a 50kW automotive drive train inverter (Power PCB). The PCB technologies enable the design of very flat, compact and low-inductive power modules. The thermal performance of these modules is comparable to conventional DCB solutions.The built Power PCB is proven to be far superior compared to an equivalent bond wire solution in terms of switching performance. In fact, the parasitic dc-link inductance can be drastically reduced from 15.4nH (standard) down to 2.8nH (Power PCB). Thereby, the turn-off overvoltages are decreased significantly. Consequently, the switching losses are reduced and also conduction losses can be potentially reduced by an optional increase of the dc-link voltage. Thereby, the energy efficiency of electric vehicles can be substantially enhanced.

	Avalanche Ruggedness of 800V Lateral IGBTs in Bulk Si By Gianluca CAMUSO, Nishad UDUGAMPOLA, Vasantha PATHIRANA, Tanya TRAJKOVIC, Florin UDREA	[View] [Download]
Abstract: Avalanche capability of 800V rated Lateral IGBTs (LIGBTs) fabricated using bulk CMOS technology has been investigated for the first time for both turn-on and turn-off. The LIGBTs have been designed for 65kHz operation in energy-efficient, compact off-line power supplies. Measurements of the device during turn-on revealed failures under high line voltages. The device was analysed using a combination of measurements and simulations which revealed that the dynamic avalanche was the cause of failure. An optimised LIGBT has been designed, simulated, fabricated and tested. The optimised device exhibits higher breakdown voltage and improved turn-on avalanche capability. Moreover, the optimised device showed improved avalanche capability during turn-off and reduced likelihood of latch-up.

	Modeling of Turn-Off Switching Energy in IGBT Controlled Silicon PiN Diodes By SAEED JAHDI, Olayiwola ALATISE, Philip MAWBY	[View] [Download]
Abstract: Silicon PiN diodes are the most widely used rectifying technology in industry especially in voltage source converters. The PiN diodes are usually used as anti-parallel diodes across silicon IGBTs where they conduct current in the reverse direction as the current commutates between the phases of the converter. They tend to generate a considerable amount of energy losses during the turn-off transient due to the reverse recovery characteristics. The rate at which the diode is switched will determine the switching energy and will affect EMI, electrothermal stresses and reliability. Hence, it is vital to be able to predict the switching energy of the diode during its turn-off transient given the switching conditions so as to have a realistic approach towards predicting the operating temperature. The switching energy of PiN diodes is determined by the peak reverse recovery current, the peak diode voltage overshoot, the time displacement between them as well as the temperature dependency of these peaks. In this paper, a model is presented and validated over a temperature range of -75°C to 175°C and with switching speeds (dI/dt) modulated by the gate resistance on the low side IGBT ranging from 10 #937; to 1000 #937;. Comparisons show consistency between model prediction and measurements result. The model is a novel method of accurately predicting the switching energy of PiN diodes at different switching rates and temperatures using the measurements of a single switching rate at different temperatures.

	The Next Generation High Voltage IGBT Modules utilizing Enhanced-Trench ET-IGBTs and Field Charge Extraction FCE-Diodes By Maxi ANDENNA, Sven MATTHIAS, Chiara CORVASCE, Yoichi OTANI, Silvan GEISSMANN, Arnost KOPTA, Munaf RAHIMO	[View] [Download]
Abstract: In this paper, we present the next generation of IGBT modules employing the latest Enhanced Trench ET-IGBT and Field Charge Extraction FCE fast diode devices. Such technologies enable high power IGBT modules to be capable of providing higher level of electrical performance in terms of low losses, good controllability, high robustness and soft diode reverse recovery. The first prototype dual modules with the new chip technologies rated at 300A and 3300V were fabricated and tested. The paper will present in detail the ET-IGBT and FCE diode concepts, the full static and dynamic electrical test results and their impact for achieving higher levels of performance in future power electronics applications.