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The Next Generation High Voltage IGBT Modules utilizing Enhanced-Trench ET-IGBTs and Field Charge Extraction FCE-Diodes
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| Author(s) |
Maxi ANDENNA, Sven MATTHIAS, Chiara CORVASCE, Yoichi OTANI, Silvan GEISSMANN, Arnost KOPTA, Munaf RAHIMO |
| Abstract |
In this paper, we present the next generation of IGBT modules employing the latest Enhanced Trench
ET-IGBT and Field Charge Extraction FCE fast diode devices. Such technologies enable high power
IGBT modules to be capable of providing higher level of electrical performance in terms of low losses,
good controllability, high robustness and soft diode reverse recovery. The first prototype dual modules
with the new chip technologies rated at 300A and 3300V were fabricated and tested. The paper will
present in detail the ET-IGBT and FCE diode concepts, the full static and dynamic electrical test
results and their impact for achieving higher levels of performance in future power electronics
applications. |
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| Filename: | 0262-epe2014-full-18251303.pdf |
| Filesize: | 2.6 MB |
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| Type |
Members Only |
| Date |
Last modified 2015-06-08 by System |
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