EPE Association: EPE 2013 - LS6c: Silicon Carbide devices

EPE 2013 - LS6c: Silicon Carbide devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2013 ECCE Europe - Conference > EPE 2013 - Topic 01: Active devices > EPE 2013 - LS6c: Silicon Carbide devices

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   Analysis of the SiC VJFET gate punch-through and its dependence with the temperature
By Fabien DUBOIS, Dominique BERGOGNE, Dominique TOURNIER, Cyril BUTTAY, Hervé MOREL, Regis MEURET [View]
[Download]

Abstract: Turning off a SiC VJFET from INFINEON requires to apply a gate-to-source voltage comprised between the JFET gate threshold voltage and the punch-through voltage. Unfortunately, for applications operating over a large temperature range, these two limits vary with the temperature and reduce the useful blocking gate-to-source voltage range as the temperature rises. So, the punch-through temperature dependence is a very important feature for applications operating in a wide temperature range like aeronautic applications. This paper addresses the analysis and modeling of the punch-through phenomenon and its dependence to the temperature. The proposed model gives a good agreement with the experimental data.

   Investigation of oscillations in a 6.5-kV, 1-kA SiC diode module
By Felipe FILSECKER, Stefan WETTENGEL, Rodrigo ALVAREZ, Steffen BERNET [View]
[Download]

Abstract: SiC technology is attractive for power devices, as it potentially offers many advantages over traditional Si-based devices. However, many issues still need to be properly addressed in order to become a popular and cost-effective alternative to Si devices. One of these issues are high-frequency oscillations that appear during commutation, which limit the switching speed of the device and can produce undesired EMC problems. This paper analyzes the source of the oscillations that appear during the turn-off transient of a recently developed SiC PiN diode module (6.5 kV, 1 kA). A behavioral model derived from the device characterization was elaborated and verified. Through simulation, the main ringing sources are identified and assessed. The positive effect of an RC snubber circuit for dampening the oscillations is presented and experimentally verified.

   Thermal stability of SiC JFETs in conduction mode
By Cyril BUTTAY, Remy OUAIDA, Dominique BERGOGNE, Hervé MOREL, Christophe RAYNAUD, Florent MOREL [View]
[Download]

Abstract: Although they can operate at elevated junction temperature, silicon carbide power devices can in some cases fail, even at low ambient temperature. This destruction mechanism, called the thermal run-away, is described in the paper. Then, the sensitivity of normally-on SiC JFETs (SiCED) to this mechanism is evaluated using a model based on experimental measurements performed over a wide temperature range (from -50°C to 300°C). It is shown that above a certain current level, run-away can occur. An experimental test bench is used to validate the modelling and explore the safe-operating area of these devices. The measurements confirm the sensitivity of the device to thermal run-away. Mitigation techniques are discussed.

EPE 2013 - LS6c: Silicon Carbide devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2013 ECCE Europe - Conference > EPE 2013 - Topic 01: Active devices > EPE 2013 - LS6c: Silicon Carbide devices
	[return to parent folder]

	Analysis of the SiC VJFET gate punch-through and its dependence with the temperature By Fabien DUBOIS, Dominique BERGOGNE, Dominique TOURNIER, Cyril BUTTAY, Hervé MOREL, Regis MEURET	[View] [Download]
Abstract: Turning off a SiC VJFET from INFINEON requires to apply a gate-to-source voltage comprised between the JFET gate threshold voltage and the punch-through voltage. Unfortunately, for applications operating over a large temperature range, these two limits vary with the temperature and reduce the useful blocking gate-to-source voltage range as the temperature rises. So, the punch-through temperature dependence is a very important feature for applications operating in a wide temperature range like aeronautic applications. This paper addresses the analysis and modeling of the punch-through phenomenon and its dependence to the temperature. The proposed model gives a good agreement with the experimental data.

	Investigation of oscillations in a 6.5-kV, 1-kA SiC diode module By Felipe FILSECKER, Stefan WETTENGEL, Rodrigo ALVAREZ, Steffen BERNET	[View] [Download]
Abstract: SiC technology is attractive for power devices, as it potentially offers many advantages over traditional Si-based devices. However, many issues still need to be properly addressed in order to become a popular and cost-effective alternative to Si devices. One of these issues are high-frequency oscillations that appear during commutation, which limit the switching speed of the device and can produce undesired EMC problems. This paper analyzes the source of the oscillations that appear during the turn-off transient of a recently developed SiC PiN diode module (6.5 kV, 1 kA). A behavioral model derived from the device characterization was elaborated and verified. Through simulation, the main ringing sources are identified and assessed. The positive effect of an RC snubber circuit for dampening the oscillations is presented and experimentally verified.

	Thermal stability of SiC JFETs in conduction mode By Cyril BUTTAY, Remy OUAIDA, Dominique BERGOGNE, Hervé MOREL, Christophe RAYNAUD, Florent MOREL	[View] [Download]
Abstract: Although they can operate at elevated junction temperature, silicon carbide power devices can in some cases fail, even at low ambient temperature. This destruction mechanism, called the thermal run-away, is described in the paper. Then, the sensitivity of normally-on SiC JFETs (SiCED) to this mechanism is evaluated using a model based on experimental measurements performed over a wide temperature range (from -50°C to 300°C). It is shown that above a certain current level, run-away can occur. An experimental test bench is used to validate the modelling and explore the safe-operating area of these devices. The measurements confirm the sensitivity of the device to thermal run-away. Mitigation techniques are discussed.