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Thermal stability of SiC JFETs in conduction mode
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| Author(s) |
Cyril BUTTAY, Remy OUAIDA, Dominique BERGOGNE, Hervé MOREL, Christophe RAYNAUD, Florent MOREL |
| Abstract |
Although they can operate at elevated junction temperature, silicon carbide power devices can in some cases fail, even at low ambient temperature. This destruction mechanism, called the thermal run-away, is described in the paper. Then, the sensitivity of normally-on SiC JFETs (SiCED) to this mechanism is evaluated using a model based on experimental measurements performed over a wide temperature range (from -50°C to 300°C). It is shown that above a certain current level, run-away can occur. An experimental test bench is used to validate the modelling and explore the safe-operating area of these devices. The measurements confirm the sensitivity of the device to thermal run-away. Mitigation techniques are discussed. |
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| Filename: | 0223-epe2013-full-13133439.pdf |
| Filesize: | 1.337 MB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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