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Analysis of the SiC VJFET gate punch-through and its dependence with the temperature
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| Author(s) |
Fabien DUBOIS, Dominique BERGOGNE, Dominique TOURNIER, Cyril BUTTAY, Hervé MOREL, Regis MEURET |
| Abstract |
Turning off a SiC VJFET from INFINEON requires to apply a gate-to-source voltage comprised between the JFET gate threshold voltage and the punch-through voltage. Unfortunately, for applications operating over a large temperature range, these two limits vary with the temperature and reduce the useful blocking gate-to-source voltage range as the temperature rises. So, the punch-through temperature dependence is a very important feature for applications operating in a wide temperature range like aeronautic applications. This paper addresses the analysis and modeling of the punch-through phenomenon and its dependence to the temperature. The proposed model gives a good agreement with the experimental data. |
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| Filename: | 0344-epe2013-full-10481223.pdf |
| Filesize: | 426.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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