EPE Association: EPE 2011 - LS1c: Topic 01

EPE 2011 - LS1c: Topic 01 - SiC Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - LS1c: Topic 01 - SiC Devices

   [return to parent folder]

   Failure modes and robustness of SiC JFET transistors under current limiting operations
By Mounira BERKANI, Dhouha OTHMAN, Stéphane LEFEBVRE, Zoubir KHATIR, Tarek BEN SALAH [View]
[Download]

Abstract: The paper presents results of ageing tests of normally-on SiC JFET prototype transistors from SiCED subjected to repetitive short circuit modes corresponding to current limitation operations. Experimental tests are detailed and the evolution during tests of ageing indicators like on-state resistance and saturation current are discussed. Finally, thermal simulation results are presented in order to understand and explain evolutions of some ageing indicators.

   High-Temperature Behavior of SiC Power Diodes
By Cyril BUTTAY, Christophe RAYNAUD, Herve MOREL, Mihai LAZAR, Gabriel CIVRAC, Dominique BERGOGNE [View]
[Download]

Abstract: Silicon Carbide devices are in theory able to operate at very high temperatures, but many mechanisms actually lower the limit. In this paper we describe two of these mechanisms: the thermal run-away, and the ageing of the device.Ageing effects are assessed through two different set-ups: SiC diodes in plastic packages are stored for long periods (up to 2000 hrs) in a furnace with a temperature ranging from 200 to 250°C, while bare die diodes are stored in vacuum at a temperature of 350°C.A study is then performed to assess whether the diodes under test, which have a MPS structure, are sensitive to thermal run-away. It is found that the mixed unipolar-bipolar architecture offers much more robustness than a pure Schottky Barrier Diode would.

   The 1200V Direct-Driven SiC JFET power switch
By Ralf SIEMIENIEC, Uwe KIRCHNER [View]
[Download]

Abstract: Wide band-gap semiconductors are most attractive as materials for power devices due to low losses, improved temperature capability and high thermal conductivity. Although silicon carbide Schottky diodes have been commercially available for years, an active wide band-gap switch has still been missing. In this work, the 1200 V SiC JFET is introduced as commercially available SiC power switch. The JFET offers an excellent performance while being a normally-on device. As an alternative to get a normally-off behavior, the direct-driven JFET concept is proposed which combines a normally-on JFET with a low -voltage normally-off silicon MOSFET. An intelligent driver solution is developed to benefit from the full JFET performance. Application tests indicate excellent performance of the proposed solution.

EPE 2011 - LS1c: Topic 01 - SiC Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - LS1c: Topic 01 - SiC Devices
	[return to parent folder]

	Failure modes and robustness of SiC JFET transistors under current limiting operations By Mounira BERKANI, Dhouha OTHMAN, Stéphane LEFEBVRE, Zoubir KHATIR, Tarek BEN SALAH	[View] [Download]
Abstract: The paper presents results of ageing tests of normally-on SiC JFET prototype transistors from SiCED subjected to repetitive short circuit modes corresponding to current limitation operations. Experimental tests are detailed and the evolution during tests of ageing indicators like on-state resistance and saturation current are discussed. Finally, thermal simulation results are presented in order to understand and explain evolutions of some ageing indicators.

	High-Temperature Behavior of SiC Power Diodes By Cyril BUTTAY, Christophe RAYNAUD, Herve MOREL, Mihai LAZAR, Gabriel CIVRAC, Dominique BERGOGNE	[View] [Download]
Abstract: Silicon Carbide devices are in theory able to operate at very high temperatures, but many mechanisms actually lower the limit. In this paper we describe two of these mechanisms: the thermal run-away, and the ageing of the device.Ageing effects are assessed through two different set-ups: SiC diodes in plastic packages are stored for long periods (up to 2000 hrs) in a furnace with a temperature ranging from 200 to 250°C, while bare die diodes are stored in vacuum at a temperature of 350°C.A study is then performed to assess whether the diodes under test, which have a MPS structure, are sensitive to thermal run-away. It is found that the mixed unipolar-bipolar architecture offers much more robustness than a pure Schottky Barrier Diode would.

	The 1200V Direct-Driven SiC JFET power switch By Ralf SIEMIENIEC, Uwe KIRCHNER	[View] [Download]
Abstract: Wide band-gap semiconductors are most attractive as materials for power devices due to low losses, improved temperature capability and high thermal conductivity. Although silicon carbide Schottky diodes have been commercially available for years, an active wide band-gap switch has still been missing. In this work, the 1200 V SiC JFET is introduced as commercially available SiC power switch. The JFET offers an excellent performance while being a normally-on device. As an alternative to get a normally-off behavior, the direct-driven JFET concept is proposed which combines a normally-on JFET with a low -voltage normally-off silicon MOSFET. An intelligent driver solution is developed to benefit from the full JFET performance. Application tests indicate excellent performance of the proposed solution.