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High-Temperature Behavior of SiC Power Diodes
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| Author(s) |
Cyril BUTTAY, Christophe RAYNAUD, Herve MOREL, Mihai LAZAR, Gabriel CIVRAC, Dominique BERGOGNE |
| Abstract |
Silicon Carbide devices are in theory able to operate at very high temperatures, but many mechanisms actually lower the limit. In this paper we describe two of these mechanisms: the thermal run-away, and the ageing of the device.Ageing effects are assessed through two different set-ups: SiC diodes in plastic packages are stored for long periods (up to 2000 hrs) in a furnace with a temperature ranging from 200 to 250°C, while bare die diodes are stored in vacuum at a temperature of 350°C.A study is then performed to assess whether the diodes under test, which have a MPS structure, are sensitive to thermal run-away. It is found that the mixed unipolar-bipolar architecture offers much more robustness than a pure Schottky Barrier Diode would. |
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| Filename: | 0191-epe2011-full-17563738.pdf |
| Filesize: | 457.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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