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   Failure modes and robustness of SiC JFET transistors under current limiting operations   [View] 
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 Author(s)   Mounira BERKANI, Dhouha OTHMAN, Stéphane LEFEBVRE, Zoubir KHATIR, Tarek BEN SALAH 
 Abstract   The paper presents results of ageing tests of normally-on SiC JFET prototype transistors from SiCED subjected to repetitive short circuit modes corresponding to current limitation operations. Experimental tests are detailed and the evolution during tests of ageing indicators like on-state resistance and saturation current are discussed. Finally, thermal simulation results are presented in order to understand and explain evolutions of some ageing indicators. 
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Filename:0347-epe2011-full-20104167.pdf
Filesize:1.971 MB
 Type   Members Only 
 Date   Last modified 2012-01-26 by System