EPE Association: EPE 2011 - DS1f: Topic 01: MOS Controlled Silicon Power Devices

EPE 2011 - DS1f: Topic 01: MOS Controlled Silicon Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - DS1f: Topic 01: MOS Controlled Silicon Power Devices

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   A 6-in-1 IGBT module performance evaluation platform determining the trade-off between dV/dt and turn-on loss of different IGBT / FwDi chip setups
By Marco HONSBERG, Thomas RADKE [View]
[Download]

Abstract: Achieving good loss performance by high switching speed at low gate resistance is trading-off with the system’s EMI behaviour. An evaluation platform has been developed to characterize 6-in-1 IGBT modules and to determine their dV/dt versus turn-on loss as function of the gate resistance. The elec-trical investigation concludes with a chart indicating the trade-off between turn-on switching loss ver-sus dV/dt parameterized as a function of the sum of internal and external gate resistance of a 150A/1200V 6-in-1 IGBT module. The SMPS part of the developed test platform solution has been thermally analysed.

   A monolithically integrated vertical bidirectional IGBT having all the main electrodes on the front side
By Hakim TAHIR, Abdelhakim BOURENNANE, Jean-Louis SANCHEZ [View]
[Download]

Abstract: A vertical bidirectional IGBT having all its main electrodes in the front side of the silicon wafer is proposed. The main goal of the proposed structure is to overcome the difficulties and complexity of packaging realization encountered in some of the proposed vertical power bidirectional switches. Indeed, they generally have their main electrodes (anode and cathode) and their MOS gate electrodes on both sides of the wafer [1][2]. Extensive 2D simulations were used in order to validate the device operating modes and to analyse the device static as well as dynamic performances. The technological process suitable for its realization is also described.

   A Robust Top Structure Design in a Field-Stop Emitter-Implant Trench-Gate IGBT for Improved Short Circuit Ruggedness.
By Antonino Sebastiano ALESSANDRIA, Leonardo FRAGAPANE [View]
[Download]

Abstract: This paper is related to the top structure design optimization in the case of a 1.2KV Field-Stop (FS) Emitter-implant (EI) Trench-gate IGBT. In particular we focused our attention on the electrical behavior of the device and, above all, on some specific electrical characteristics in order to address all the applications where the short-circuit withstanding time is a key parameter. The results of the optimization are shown in this paper through a simulation study.

   Characterization of a New 1.2 kV IGBT 3L-NPC Phase-leg Module for Low Voltage Applications
By Michael SPRENGER, Rodrigo ALVAREZ, Steffen BERNET, Ingo STAUDT [View]
[Download]

Abstract: This paper presents a new 3L-NPC phase-leg module, the SKiM®4. The DCB structure is shown and information about electrical and mechanical module parameters are given. The test-bench and the experiments performed for the characterization of the module are explained. Calculations and results are given for leakage inductance, di/dt, dv/dt, switching power and energy.

   Comparison of chip- and module-measurements with high power IGBTs and RC-IGBTs
By Hans-Günter ECKEL, Daniel WIGGER [View]
[Download]

Abstract: Proper scaling of single chip measurements to module-level is an important task during the develop¬ment of power semiconductor chips. In this paper it is shown how different the comparison between the reverse recovery behaviour of diodes in a conventional IGBT module and of the diode-mode of RC-IGBT can be on chip-level and on module level. The reason for these differences is, that in a conventional high voltage, high power IGBT module only one third of the chips are diodes, while all RC-IGBT chips are operating as diode. This leads to different scaling factors for conventional modules and RC-IGBT modules.

   Comparison of Press-Pack IGBT at Hard Switching and Clamp Operation for Medium Voltage Converters
By Rodrigo ALVAREZ, Felipe FILSECKER, Steffen BERNET [View]
[Download]

Abstract: The newly developed press-pack IGBT devices compete with IGCTs in high power industrial applications.These new semiconductors were already studied in detail for hard switching and for clamp operation. Nevertheless, a comparison of the basic switching characteristics of the IGBT press-pack devices for hard switching and clamp operation has not been done so far. This paper compares the switching behavior, the switching losses and the safe operating area trajectories of the new 85 mm, 4.5 kV, 1.2 kA press-pack SPT+ IGBT for hard switching and clamp operation. The methods used for the experimental characterization and comparison are explained in detail.

   Enhanced TFTs Model Using Novel Nano-Composite High-K Gate Dielectric
By Ahmed MOHAMED, Youssef MOBARAK, Moamed ATEF [View]
[Download]

Abstract: No abstract provided.

   Improvements in SOA Ruggedness of 6.5 kV IGBTs
By Praneet BHATNAGAR, Peter WAIND, Lee COULBECK, Ian DEVINY, Jim THOMSON [View]
[Download]

Abstract: We have presented the work done on optimization of the 6.5kV IGBT device for increasing the safe operating area both for RBSOA and SCSOA. The optimization of the bipolar gain of the IGBT has been studied. We have shown that reducing gate capacitance by 50\% combined with increased bipolar gain improves the short circuit robustness. The short circuit current capability of the 6.5 kV IGBT chip is significantly improved using the terrace gate structure.

   Introduction of a hybrid MOSFET-IGBT power switching device utilising a novel Schottky biased minority carrier injector
By Martin WESTMORELAND, Peter WARD, Philip MAWBY [View]
[Download]

Abstract: A new minority carrier injector is described and demonstrated via simulation within an otherwise standard Vertical Diffused Metal Oxide Semiconductor Field Effect Transistor (VDMOSFET) structure forming an injected hybrid device. The resultant hybrid structure is directly compared to a standard Insulated Gate Bipolar Transistor (IGBT) and unipolar VDMOSFET of identical Blocking Voltage (BV). The hybrid is shown to be a latch up free device which switches an inductive load within a comparable time frame to a unipolar MOSFET, and yet at an ambient heat-sink temperature of 300 Kelvin the bipolar hybrid achieved double the current density of the unipolar MOSFET at Gate to Cathode voltage (VGK)=20V, Anode to Cathode voltage (VAK)=2V. At 400 Kelvin, VGK=20V, VAK=1.65V the specific on state resistance (RAKONSP) of the hybrid was found to be 1.14mOhm.cm2 as compared to 3.26mOhm.cm2 of the unipolar MOSFET. The net effect of this hybrid device is to provide lowest on state loss MOSFET type performance from VAK=0.1V with built-in, self biased, bipolar protection in the event of surge current. Any increase in junction temperature as a result of surge current or over voltage only serves to assist the onset of the low loss bipolar mode. The concept is to target the 600V market.

   Investigation of mechanical stress effect on electrical behavior of Trench Punch Through IGBT under short-circuit condition at low and high temperature
By Stephane AZZOPARDI, Kamal ELBOUBKARI, Yassine BELMEHDI, Jean-Yves DELETAGE, Eric WOIRGARD [View]
[Download]

Abstract: Mechanical stress applied to the power devices can influence their static and dynamic electrical behaviors. The electrical characterization under mechanical stress might be exploited to monitor the mechanical state of the power assembly and then provide useful information regarding the health monitoring. In this study, we propose to evaluate the effect of mechanical stress on a Punch-Through Trench Gate IGBT under short-circuit configuration at low and high temperature using 2D finite element simulation. Whereas compressive mechanical stress do not influence the short-circuit current (current flow-lines and applied mechanical stress in the same direction), tensile mechanical stress will impact directly on the device current level and associated with the self-heating will induce a lower short-circuit current.

   New 1700V SPT+ IGBT and Diode Chip Set with 175°C Operating Junction Temperature
By Chiara CORVASCE, Arnost KOPTA, Jan VOBECKY, Munaf RAHIMO, Silvan GEISSMANN, Raffael SCHNELL [View]
[Download]

Abstract: In this paper we present a newly developed 1700V IGBT and diode chip set generation with optimized performances for 175°C junction temperature operations. The planar 1700V IGBT (SPT+) cell has been improved by exploiting the full potential of the N-enhancement layer with the consequent reduction of the conduction losses. In addition a substantial leakage current reduction has been achieved by designing a novel termination based on the biased ring concept. A new diode has been developed which uses the Field Shielded Anode (FSA) concept to enable a reduction of the high temperature leakage current by a factor of 3 when compared with the previous diode platform. This paper will illustrate the most important design features and based on measurement data discuss the chip set performances for low to medium inductance applications.

   Suitable Operation Conditions for Different 100V Trench-Based Power MOSFETs in 48V-input Synchronous Buck Converters
By Jaume ROIG, David LEE, Filip BAUWENS, Bhavani BURRA, Angela RINALDI, Jason MCDONALD, Bart DESOETE [View]
[Download]

Abstract: In this work a comparative analysis between different trench-based power MOSFETs is performed tooptimize the efficiency and the robustness of 48V-input synchronous buck converters. Hence, gatetrench(GT), gate-drift-trench (GDT) and split-gate (SG) trench structures are investigated bymeasurements and mixed-mode simulations to determine their suitability at different load currents andfrequencies. Moreover, in order to reduce the ringing effects, a co-integrated resistor is proposed tooptimize the inherent RC snubber branch in a SG based solution.

   Temperature adaptive IGBT gate-driver design
By Ting WU, Alberto CASTELLAZZI [View]
[Download]

Abstract: This paper is about the development of a temperature-dependent driving strategy for a 3.3 kV-1200 A planar-gate non-punch-through (NPT) insulated-gate-bipolar-transistor (IGBT) power module. In particular, the proposed strategy aims at counterbalancing the effect of variations in ambient temperature on the power losses of the semiconductor devices by regulating the amplitude of the applied gate-emitter drive signal correspondingly. The concept is developed with the help of accurate simulation models and is then demonstrated experimentally. Although not yet optimized, the validity of the proposed solution in well demonstrated by the results presented.

EPE 2011 - DS1f: Topic 01: MOS Controlled Silicon Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - DS1f: Topic 01: MOS Controlled Silicon Power Devices
	[return to parent folder]

	A 6-in-1 IGBT module performance evaluation platform determining the trade-off between dV/dt and turn-on loss of different IGBT / FwDi chip setups By Marco HONSBERG, Thomas RADKE	[View] [Download]
Abstract: Achieving good loss performance by high switching speed at low gate resistance is trading-off with the system’s EMI behaviour. An evaluation platform has been developed to characterize 6-in-1 IGBT modules and to determine their dV/dt versus turn-on loss as function of the gate resistance. The elec-trical investigation concludes with a chart indicating the trade-off between turn-on switching loss ver-sus dV/dt parameterized as a function of the sum of internal and external gate resistance of a 150A/1200V 6-in-1 IGBT module. The SMPS part of the developed test platform solution has been thermally analysed.

	A monolithically integrated vertical bidirectional IGBT having all the main electrodes on the front side By Hakim TAHIR, Abdelhakim BOURENNANE, Jean-Louis SANCHEZ	[View] [Download]
Abstract: A vertical bidirectional IGBT having all its main electrodes in the front side of the silicon wafer is proposed. The main goal of the proposed structure is to overcome the difficulties and complexity of packaging realization encountered in some of the proposed vertical power bidirectional switches. Indeed, they generally have their main electrodes (anode and cathode) and their MOS gate electrodes on both sides of the wafer [1][2]. Extensive 2D simulations were used in order to validate the device operating modes and to analyse the device static as well as dynamic performances. The technological process suitable for its realization is also described.

	A Robust Top Structure Design in a Field-Stop Emitter-Implant Trench-Gate IGBT for Improved Short Circuit Ruggedness. By Antonino Sebastiano ALESSANDRIA, Leonardo FRAGAPANE	[View] [Download]
Abstract: This paper is related to the top structure design optimization in the case of a 1.2KV Field-Stop (FS) Emitter-implant (EI) Trench-gate IGBT. In particular we focused our attention on the electrical behavior of the device and, above all, on some specific electrical characteristics in order to address all the applications where the short-circuit withstanding time is a key parameter. The results of the optimization are shown in this paper through a simulation study.

	Characterization of a New 1.2 kV IGBT 3L-NPC Phase-leg Module for Low Voltage Applications By Michael SPRENGER, Rodrigo ALVAREZ, Steffen BERNET, Ingo STAUDT	[View] [Download]
Abstract: This paper presents a new 3L-NPC phase-leg module, the SKiM®4. The DCB structure is shown and information about electrical and mechanical module parameters are given. The test-bench and the experiments performed for the characterization of the module are explained. Calculations and results are given for leakage inductance, di/dt, dv/dt, switching power and energy.

	Comparison of chip- and module-measurements with high power IGBTs and RC-IGBTs By Hans-Günter ECKEL, Daniel WIGGER	[View] [Download]
Abstract: Proper scaling of single chip measurements to module-level is an important task during the develop¬ment of power semiconductor chips. In this paper it is shown how different the comparison between the reverse recovery behaviour of diodes in a conventional IGBT module and of the diode-mode of RC-IGBT can be on chip-level and on module level. The reason for these differences is, that in a conventional high voltage, high power IGBT module only one third of the chips are diodes, while all RC-IGBT chips are operating as diode. This leads to different scaling factors for conventional modules and RC-IGBT modules.

	Comparison of Press-Pack IGBT at Hard Switching and Clamp Operation for Medium Voltage Converters By Rodrigo ALVAREZ, Felipe FILSECKER, Steffen BERNET	[View] [Download]
Abstract: The newly developed press-pack IGBT devices compete with IGCTs in high power industrial applications.These new semiconductors were already studied in detail for hard switching and for clamp operation. Nevertheless, a comparison of the basic switching characteristics of the IGBT press-pack devices for hard switching and clamp operation has not been done so far. This paper compares the switching behavior, the switching losses and the safe operating area trajectories of the new 85 mm, 4.5 kV, 1.2 kA press-pack SPT+ IGBT for hard switching and clamp operation. The methods used for the experimental characterization and comparison are explained in detail.

	Enhanced TFTs Model Using Novel Nano-Composite High-K Gate Dielectric By Ahmed MOHAMED, Youssef MOBARAK, Moamed ATEF	[View] [Download]
Abstract: No abstract provided.

	Improvements in SOA Ruggedness of 6.5 kV IGBTs By Praneet BHATNAGAR, Peter WAIND, Lee COULBECK, Ian DEVINY, Jim THOMSON	[View] [Download]
Abstract: We have presented the work done on optimization of the 6.5kV IGBT device for increasing the safe operating area both for RBSOA and SCSOA. The optimization of the bipolar gain of the IGBT has been studied. We have shown that reducing gate capacitance by 50\% combined with increased bipolar gain improves the short circuit robustness. The short circuit current capability of the 6.5 kV IGBT chip is significantly improved using the terrace gate structure.

	Introduction of a hybrid MOSFET-IGBT power switching device utilising a novel Schottky biased minority carrier injector By Martin WESTMORELAND, Peter WARD, Philip MAWBY	[View] [Download]
Abstract: A new minority carrier injector is described and demonstrated via simulation within an otherwise standard Vertical Diffused Metal Oxide Semiconductor Field Effect Transistor (VDMOSFET) structure forming an injected hybrid device. The resultant hybrid structure is directly compared to a standard Insulated Gate Bipolar Transistor (IGBT) and unipolar VDMOSFET of identical Blocking Voltage (BV). The hybrid is shown to be a latch up free device which switches an inductive load within a comparable time frame to a unipolar MOSFET, and yet at an ambient heat-sink temperature of 300 Kelvin the bipolar hybrid achieved double the current density of the unipolar MOSFET at Gate to Cathode voltage (VGK)=20V, Anode to Cathode voltage (VAK)=2V. At 400 Kelvin, VGK=20V, VAK=1.65V the specific on state resistance (RAKONSP) of the hybrid was found to be 1.14mOhm.cm2 as compared to 3.26mOhm.cm2 of the unipolar MOSFET. The net effect of this hybrid device is to provide lowest on state loss MOSFET type performance from VAK=0.1V with built-in, self biased, bipolar protection in the event of surge current. Any increase in junction temperature as a result of surge current or over voltage only serves to assist the onset of the low loss bipolar mode. The concept is to target the 600V market.

	Investigation of mechanical stress effect on electrical behavior of Trench Punch Through IGBT under short-circuit condition at low and high temperature By Stephane AZZOPARDI, Kamal ELBOUBKARI, Yassine BELMEHDI, Jean-Yves DELETAGE, Eric WOIRGARD	[View] [Download]
Abstract: Mechanical stress applied to the power devices can influence their static and dynamic electrical behaviors. The electrical characterization under mechanical stress might be exploited to monitor the mechanical state of the power assembly and then provide useful information regarding the health monitoring. In this study, we propose to evaluate the effect of mechanical stress on a Punch-Through Trench Gate IGBT under short-circuit configuration at low and high temperature using 2D finite element simulation. Whereas compressive mechanical stress do not influence the short-circuit current (current flow-lines and applied mechanical stress in the same direction), tensile mechanical stress will impact directly on the device current level and associated with the self-heating will induce a lower short-circuit current.

	New 1700V SPT+ IGBT and Diode Chip Set with 175°C Operating Junction Temperature By Chiara CORVASCE, Arnost KOPTA, Jan VOBECKY, Munaf RAHIMO, Silvan GEISSMANN, Raffael SCHNELL	[View] [Download]
Abstract: In this paper we present a newly developed 1700V IGBT and diode chip set generation with optimized performances for 175°C junction temperature operations. The planar 1700V IGBT (SPT+) cell has been improved by exploiting the full potential of the N-enhancement layer with the consequent reduction of the conduction losses. In addition a substantial leakage current reduction has been achieved by designing a novel termination based on the biased ring concept. A new diode has been developed which uses the Field Shielded Anode (FSA) concept to enable a reduction of the high temperature leakage current by a factor of 3 when compared with the previous diode platform. This paper will illustrate the most important design features and based on measurement data discuss the chip set performances for low to medium inductance applications.

	Suitable Operation Conditions for Different 100V Trench-Based Power MOSFETs in 48V-input Synchronous Buck Converters By Jaume ROIG, David LEE, Filip BAUWENS, Bhavani BURRA, Angela RINALDI, Jason MCDONALD, Bart DESOETE	[View] [Download]
Abstract: In this work a comparative analysis between different trench-based power MOSFETs is performed tooptimize the efficiency and the robustness of 48V-input synchronous buck converters. Hence, gatetrench(GT), gate-drift-trench (GDT) and split-gate (SG) trench structures are investigated bymeasurements and mixed-mode simulations to determine their suitability at different load currents andfrequencies. Moreover, in order to reduce the ringing effects, a co-integrated resistor is proposed tooptimize the inherent RC snubber branch in a SG based solution.

	Temperature adaptive IGBT gate-driver design By Ting WU, Alberto CASTELLAZZI	[View] [Download]
Abstract: This paper is about the development of a temperature-dependent driving strategy for a 3.3 kV-1200 A planar-gate non-punch-through (NPT) insulated-gate-bipolar-transistor (IGBT) power module. In particular, the proposed strategy aims at counterbalancing the effect of variations in ambient temperature on the power losses of the semiconductor devices by regulating the amplitude of the applied gate-emitter drive signal correspondingly. The concept is developed with the help of accurate simulation models and is then demonstrated experimentally. Although not yet optimized, the validity of the proposed solution in well demonstrated by the results presented.