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Temperature adaptive IGBT gate-driver design
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| Author(s) |
Ting WU, Alberto CASTELLAZZI |
| Abstract |
This paper is about the development of a temperature-dependent driving strategy for a 3.3 kV-1200 A planar-gate non-punch-through (NPT) insulated-gate-bipolar-transistor (IGBT) power module. In particular, the proposed strategy aims at counterbalancing the effect of variations in ambient temperature on the power losses of the semiconductor devices by regulating the amplitude of the applied gate-emitter drive signal correspondingly. The concept is developed with the help of accurate simulation models and is then demonstrated experimentally. Although not yet optimized, the validity of the proposed solution in well demonstrated by the results presented. |
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| Filename: | 0657-epe2011-full-23402000.pdf |
| Filesize: | 427.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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