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Comparison of chip- and module-measurements with high power IGBTs and RC-IGBTs
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| Author(s) |
Hans-Günter ECKEL, Daniel WIGGER |
| Abstract |
Proper scaling of single chip measurements to module-level is an important task during the develop¬ment of power semiconductor chips. In this paper it is shown how different the comparison between the reverse recovery behaviour of diodes in a conventional IGBT module and of the diode-mode of RC-IGBT can be on chip-level and on module level. The reason for these differences is, that in a conventional high voltage, high power IGBT module only one third of the chips are diodes, while all RC-IGBT chips are operating as diode. This leads to different scaling factors for conventional modules and RC-IGBT modules. |
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| Filename: | 0310-epe2011-full-18062290.pdf |
| Filesize: | 780.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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