EPE Association: EPE 2011 - DS2c: Topic 01: Silicon Power Diode and Thyristor Devices and Monolithic Integration, System on Chip

EPE 2011 - DS2c: Topic 01: Silicon Power Diode and Thyristor Devices and Monolithic Integration, System on Chip
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - DS2c: Topic 01: Silicon Power Diode and Thyristor Devices and Monolithic Integration, System on Chip

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   A 200mA Switched Capacitor Voltage Regulator on 32nm CMOS and regulation schemes to enable DVFS
By Rinkle JAIN [View]
[Download]

Abstract: A wide programmable voltage range combined with fast response times are fundamental requirements for the voltage regulator to enable dynamic voltage and frequency scaling (DVFS) in microprocessors and SoCs. This work investigates the feasibility of a switched capacitor voltage regulator as a solution for distributed power delivery in such systems. In the context of rated currents of several hundreds of $m$A, this paper closely examines various indices like regulation, losses. ripple, and response times in a representative 1.8V input, 200mA 0.6V - 1.05V programmable output complete on-die switched capacitor voltage regulator. Control techniques that can be used to achieve regulation while keeping the losses at minimum under this wide range of operating conditions are delineated. The results are generic and may be used for any other two phase switched capacitor (SC) topology, voltage specifications, and CMOS process. Verification using simulations and experimental results from a converter built on 32nm CMOS are presented. In conclusion, switched capacitor voltage regulators (SCVRs) show fast response times, have multiple high efficiency output voltages, low standby leakage, and inherently high light load efficiency, thereby making them an excellent candidate to enable multiple voltage domains in a chip and to carry out DVFS for power savings.

   Measurements on IGCTs and Diodes Series Connection
By Aiman KERIM, Juergen STEINKE, Björn OEDEGARD, Stefan REICHERT [View]
[Download]

Abstract: This paper presents experimental analysis of the voltage sharing in series connected IGCTs (IntegratedGate Commutated Thyristors) and their associated freewheeling diodes. Voltage sharing is evaluatedin function of three interesting parameters: junction temperatures, gate units delay and switch offcurrents during switch off transients. Voltage unbalance can be improved by keeping time delaydifference Δtdoff (IGCTs) and reverse recovery charge difference ΔQrr (diodes) as small as possible(Banding).

   n-type doping of silicon by proton implantation
By Jan N. KLUG, Josef LUTZ, Jan B. MEIJER [View]
[Download]

Abstract: Ion implantation is one of the most common processes in semiconductor manufacturing. Unfortunately the implantation depth and is limited due to the mass of phosphorous or arsenic. Proton irradiation can go beyond this limit and be utilized to adjust the doping of silicon power devices even in a high depth. The creation of donors is studied for high energy, high dose proton irradiation (2 MeV, fluences 10^14 to 10^16 cm^-2) in FZ-silicon. The relation between the proton implantation dose and the resulting doping is determined and is compared with previous results. A saturation effect related to the oxygen content is found and an experimental evidence for the incorporation of oxygen in hydrogen-related shallow thermal donors (STD(H)) is given. The resulting profiles are studied with Spreading-Resistance-Profiling and their complex shape is with the help of SRIM calculations. Acceptors and donors are created. The superposition of both profiles explains the experimental results.

   One more way to increase the recovery softness of fast high-voltage diodes
By Alexey SURMA, Vitaly GUBAREV, Alexandr STAVTSEV, Anatoly CHERNIKOV, Igor VETROV [View]
[Download]

Abstract: There is a new way of increasing the softness of reverse recovery (S-factor) of high-voltage p+-p-n--n'-n+ diode using local reduction of life time in n part of layer adjacent to n+. Experimentally proved the possibility to reach S-factor above 2 for high-voltage diodes (Vbr ~ 4500-4800V) of such structure with snubberless recovery in circuit with inductive load and roll-off speed more than 1500A/µs.

   Package Design of High Power Thyristor Based Devices with Integrated MOS Structure
By Michael BRAGARD, Christian RONGE, Rik W. DE DONCKER [View]
[Download]

Abstract: The increasing use of renewable resources such as wind and solar energy requires robust powerconverters for feeding energy into the grid. However, conventional power converters, includingcoupled Integrated Gate Commutated Thyristors (IGCTs), are sensitive to temperature changes andvibrations. To decouple the thyristor from the driver, an Integrated Emitter Turn-Off device (IETO)had been presented. Based on this IETO, this current paper introduces a sandwich design of highpowerthyristor devices. The electrical, thermal and mechanical aspects of such devices were firstsimulated and then the optimal design was built and tested. The aforementioned aspects of the newdesign attained the levels of IGCT devices. In conclusion, the newly proposed decoupled sandwichdesign with integrated MOS structure shows enormous potential for feeding fluctuating power into thegrid. In particular, this sandwich design is ideal in terms of parasitic inductance; this means the lowerthe inductance is, the greater the power density of the whole thyristor structure is.

   Turn-off Behavior of 4.5 kV Asymmetric IGCTs under Zero Voltage Switching Conditions
By Robert LENKE, Rik W. DE DONCKER, Jon SAN-SEBASTIAN, Ion ETXEBERRIA-OTADUI, Silvano TARABORRELLI, Hauke VAN HOEK [View]
[Download]

Abstract: This paper presents the experimental characterization of four different types of 4.5 kV, 91 mm asymmetric IGCTs under zero-voltage switching. On-state and turn-off tests at ratings up to 2.8 kV/3.3 kA with several resonant snubber capacitances and different junction temperatures have been performed to obtain experimental data. For converter loss modeling, e.g. dc-to-dc converters for off-shore windfarms, the measured device losses have been used to derive a parameter-dependent fitting function.

EPE 2011 - DS2c: Topic 01: Silicon Power Diode and Thyristor Devices and Monolithic Integration, System on Chip
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - DS2c: Topic 01: Silicon Power Diode and Thyristor Devices and Monolithic Integration, System on Chip
	[return to parent folder]

	A 200mA Switched Capacitor Voltage Regulator on 32nm CMOS and regulation schemes to enable DVFS By Rinkle JAIN	[View] [Download]
Abstract: A wide programmable voltage range combined with fast response times are fundamental requirements for the voltage regulator to enable dynamic voltage and frequency scaling (DVFS) in microprocessors and SoCs. This work investigates the feasibility of a switched capacitor voltage regulator as a solution for distributed power delivery in such systems. In the context of rated currents of several hundreds of $m$A, this paper closely examines various indices like regulation, losses. ripple, and response times in a representative 1.8V input, 200mA 0.6V - 1.05V programmable output complete on-die switched capacitor voltage regulator. Control techniques that can be used to achieve regulation while keeping the losses at minimum under this wide range of operating conditions are delineated. The results are generic and may be used for any other two phase switched capacitor (SC) topology, voltage specifications, and CMOS process. Verification using simulations and experimental results from a converter built on 32nm CMOS are presented. In conclusion, switched capacitor voltage regulators (SCVRs) show fast response times, have multiple high efficiency output voltages, low standby leakage, and inherently high light load efficiency, thereby making them an excellent candidate to enable multiple voltage domains in a chip and to carry out DVFS for power savings.

	Measurements on IGCTs and Diodes Series Connection By Aiman KERIM, Juergen STEINKE, Björn OEDEGARD, Stefan REICHERT	[View] [Download]
Abstract: This paper presents experimental analysis of the voltage sharing in series connected IGCTs (IntegratedGate Commutated Thyristors) and their associated freewheeling diodes. Voltage sharing is evaluatedin function of three interesting parameters: junction temperatures, gate units delay and switch offcurrents during switch off transients. Voltage unbalance can be improved by keeping time delaydifference Δtdoff (IGCTs) and reverse recovery charge difference ΔQrr (diodes) as small as possible(Banding).

	n-type doping of silicon by proton implantation By Jan N. KLUG, Josef LUTZ, Jan B. MEIJER	[View] [Download]
Abstract: Ion implantation is one of the most common processes in semiconductor manufacturing. Unfortunately the implantation depth and is limited due to the mass of phosphorous or arsenic. Proton irradiation can go beyond this limit and be utilized to adjust the doping of silicon power devices even in a high depth. The creation of donors is studied for high energy, high dose proton irradiation (2 MeV, fluences 10^14 to 10^16 cm^-2) in FZ-silicon. The relation between the proton implantation dose and the resulting doping is determined and is compared with previous results. A saturation effect related to the oxygen content is found and an experimental evidence for the incorporation of oxygen in hydrogen-related shallow thermal donors (STD(H)) is given. The resulting profiles are studied with Spreading-Resistance-Profiling and their complex shape is with the help of SRIM calculations. Acceptors and donors are created. The superposition of both profiles explains the experimental results.

	One more way to increase the recovery softness of fast high-voltage diodes By Alexey SURMA, Vitaly GUBAREV, Alexandr STAVTSEV, Anatoly CHERNIKOV, Igor VETROV	[View] [Download]
Abstract: There is a new way of increasing the softness of reverse recovery (S-factor) of high-voltage p+-p-n--n'-n+ diode using local reduction of life time in n part of layer adjacent to n+. Experimentally proved the possibility to reach S-factor above 2 for high-voltage diodes (Vbr ~ 4500-4800V) of such structure with snubberless recovery in circuit with inductive load and roll-off speed more than 1500A/µs.

	Package Design of High Power Thyristor Based Devices with Integrated MOS Structure By Michael BRAGARD, Christian RONGE, Rik W. DE DONCKER	[View] [Download]
Abstract: The increasing use of renewable resources such as wind and solar energy requires robust powerconverters for feeding energy into the grid. However, conventional power converters, includingcoupled Integrated Gate Commutated Thyristors (IGCTs), are sensitive to temperature changes andvibrations. To decouple the thyristor from the driver, an Integrated Emitter Turn-Off device (IETO)had been presented. Based on this IETO, this current paper introduces a sandwich design of highpowerthyristor devices. The electrical, thermal and mechanical aspects of such devices were firstsimulated and then the optimal design was built and tested. The aforementioned aspects of the newdesign attained the levels of IGCT devices. In conclusion, the newly proposed decoupled sandwichdesign with integrated MOS structure shows enormous potential for feeding fluctuating power into thegrid. In particular, this sandwich design is ideal in terms of parasitic inductance; this means the lowerthe inductance is, the greater the power density of the whole thyristor structure is.

	Turn-off Behavior of 4.5 kV Asymmetric IGCTs under Zero Voltage Switching Conditions By Robert LENKE, Rik W. DE DONCKER, Jon SAN-SEBASTIAN, Ion ETXEBERRIA-OTADUI, Silvano TARABORRELLI, Hauke VAN HOEK	[View] [Download]
Abstract: This paper presents the experimental characterization of four different types of 4.5 kV, 91 mm asymmetric IGCTs under zero-voltage switching. On-state and turn-off tests at ratings up to 2.8 kV/3.3 kA with several resonant snubber capacitances and different junction temperatures have been performed to obtain experimental data. For converter loss modeling, e.g. dc-to-dc converters for off-shore windfarms, the measured device losses have been used to derive a parameter-dependent fitting function.