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One more way to increase the recovery softness of fast high-voltage diodes
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| Author(s) |
Alexey SURMA, Vitaly GUBAREV, Alexandr STAVTSEV, Anatoly CHERNIKOV, Igor VETROV |
| Abstract |
There is a new way of increasing the softness of reverse recovery (S-factor) of high-voltage p+-p-n--n'-n+ diode using local reduction of life time in n part of layer adjacent to n+. Experimentally proved the possibility to reach S-factor above 2 for high-voltage diodes (Vbr ~ 4500-4800V) of such structure with snubberless recovery in circuit with inductive load and roll-off speed more than 1500A/µs. |
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| Filename: | 0936-epe2011-full-09553450.pdf |
| Filesize: | 292.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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