EPE Association: EPE-PEMC 2008 - Topic: Semiconductor Devices and Packaging

EPE-PEMC 2008 - Topic: Semiconductor Devices and Packaging
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2008 - Conference > EPE-PEMC 2008 - Topic: Semiconductor Devices and Packaging

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   A Forward Converter with a Monolithic Cascode Device: Design and Experimental Investigation
By F. Chimento [View]
[Download]

Abstract: A forward converter for switched mode power supply (SMPS) applications has been designed and realized, with a monolithic cascode device as active switch, looking for the performance enhancement. The operation of this device in a SMPS application is shown in detail, and results regarding electrical and thermal characteristics in comparison to the power MOSFET device solution are discussed. The experimental tests that have been carried out are targeted to show the suitability of this device when a 1000-1500V operation is required and a single switch topology is the most appropriate. Some remarks about the driving circuit adopted for the cascode are also reported.

   A Novel RESURFed Double Gates IGBT with Superior Performance
By Dongming Wu and Lingling Yang [View]
[Download]

Abstract: In this paper, we proposed a novel RESURFed double channels LIGBT which can achieve high breakdown voltage. The proposed structure, incorporating trench gate and planar gate, can significantly improve the capacity for handling high current and conductance modulation. P-top layer and deep n-drift/p-sub junction have been adopted, which results in a 745V breakdown voltage with the drift length of 44mm only. Reduction in drift length can not only reduce on-resistance but also raise current density. Simulation results demonstrate that the forward voltage drop can lower by 12\% relative to the conventional one while breakdown voltage can increase by 18\%.

   An Analysis on Turn-Off Behaviour of 1.2kV NPT-CIGBT Under Clamped Inductive Load Switching
By S. T. Kong, L. Ngwendson, M. Sweet and E. M. Sankara Narayanan [View]
[Download]

Abstract: For the first time, this paper analyses the turn-off behaviour of the planar 1.2kV/25A NPT-CIGBT under clamped inductive load switching in detail through experiment and simulation. Turn-off behaviour of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied, in order to observe the di/dt, dv/dt and turn-off energy loss of the device. Experimental results are shown at 25°C and 125°C. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGBT turn-off process.

   An Empiric Approach to Establishing MOSFET Failure Rate Induced by Single-Event Burnout
By Jeroen van Duivenbode and Bart Smet [View]
[Download]

Abstract: Although the detrimental effect of Single- Event Burnout on semiconductors has been known for over two decades, component manufacturers publish little related data. Through extensive testing, the authors have established trustworthy reliability figures and demonstrate that Single-Event Burnout has a remarkably high impact on power converter failure rate. A standard testing method is proposed for improved power semiconductor qualification testing.

   Exact Circuit Power Loss Design Method for High Power Density Converters Utilizing Si-IGBT/SiC-Diode Hybrid Pairs
By Kazuto Takao [View]
[Download]

Abstract: An exact design method of circuit power loss is developed. The method is useful for designing high power density converters utilizing Si-IGBT/SiC-Shottky-barrier-diode (SiC-SBD) or high voltage Si-IEGT/SiC-PiN-diode hybrid pairs. For the exact power loss calculation, an empirical method to extract device model parameters is introduced. The calculation results of the power loss are compared with experimental results, and the good agreements are confirmed. By using the method, the power loss of the 4.5 kV Si-IEGT/5 kV SiC-PiN diode hybrid pair is estimated to investigate the possibility of further increase of the switching frequency.

   In-Service Life Consumption Estimation in Power Modules
By Mahera Musallam [View]
[Download]

Abstract: Health management and reliability form a fundamental part of the design and development cycle of electronic products. In this paper compact real-time thermal models are used to predict temperatures of inaccessible locations within the power module. These models are then combined with physics of failure based reliability analysis to provide in-service predictions of crack propagation in solder layers and at the bond wire joints as a result of thermal cycling. The temperature estimates are combined with lifetime based reliability models to provide a tool for life consumption monitoring. Rainflow counting algorithms are applied to the temperature vs. time data to extract the occurrence frequencies of different thermal cycling ranges. Knowledge of the life consumed for each different cycle then allows the remaining life time to be estimated under arbitrary operational conditions. The technique can be employed to provide functions such as life consumption monitoring and prognostic maintenance scheduling.

   Measurement of Temperature Sensitive Parameter Characteristics of Semiconductor Silicon and Silicon - Carbide Power Devices
By Mietek Nowak, Jacek Rabkowski and Roman Barlik [View]
[Download]

Abstract: In this paper, results of laboratory investigation of representative samples of semiconductor silicon and silicon carbide power devices, such as PiN diode, Shottky diode, IGBT and JFET, are presented. With use of a thermal chamber the characteristics of temperature sensitive parameters for selected types of devices were determined by measurements within the range 25 - 150°C. The measurement was done using short pulses, which are not able to change measured temperatures. The results have to enable identification of junction temperature in the case of other tests, especially those oriented on energy losses, efficiency, and thermal management.

   Switching and Conducting Performance of SiC-JFET and ESBT Against MOSFET and IGBT
By André Knop [View]
[Download]

Abstract: Here the switching and conducting performance of a SiC-JFET, an Emitter-Switching Bipolar Transistor (ESBT) and conventional power semiconductors as MOSFET and IGBT with Si- and SiC-diode is presented. The variety of power semiconductors is growing and there is a need to get rules to select them for the application given. The structure and special characteristics of the new devices are explained. The switching and conducting behavior of the devices is measured and investigated. The test circuit and the measurement method are presented. Based on the measured waveforms the power losses are calculated. The results of the switching and conducting performance of these power semiconductors are discussed.

   Turn-Off Behaviour of High Voltage NPT- and FS-IGBT
By Hans-Guenter Eckel [View]
[Download]

Abstract: A simple but physical based one dimensional model is used to characterize the turn-off of high voltage IGBTs. The dependence of the overvoltage and the peak electric field on the gate driving conditions is analyzed. The transition from a triangular to a trapezoidal electric field has a major impact on the turn-off behaviour. If this transition occurs during the voltage slope, the dv/dt increases significantly. If the field-stop layer is reached during the current slope, the current snaps off, which leads to a second voltage spike with a high absolute voltage but only a moderate peak field.

   Unsymmetrical Gate Voltage Drive for High Power 1200V IGBT4 Modules Based on Coreless Transformer Technology Driver
By Piotr Luniewski [View]
[Download]

Abstract: The performance of the new IGBT4 chip technology in PrimePACKTM high power module housing is presented here together with the Coreless Transformer technology driver IC for the first time in this paper. These modules usually are driven using symmetrical gate drive voltage of +/-15V. The driver presented here uses unsymmetrical gate drive voltage of -7V and +15V. This alternate approach results in different dynamic module behaviour compared to classical. Thus, this paper discusses differences in both concepts and brings a solution which allows to use the unsymmetrical concept as well as symmetrical.

EPE-PEMC 2008 - Topic: Semiconductor Devices and Packaging
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2008 - Conference > EPE-PEMC 2008 - Topic: Semiconductor Devices and Packaging
	[return to parent folder]

	A Forward Converter with a Monolithic Cascode Device: Design and Experimental Investigation By F. Chimento	[View] [Download]
Abstract: A forward converter for switched mode power supply (SMPS) applications has been designed and realized, with a monolithic cascode device as active switch, looking for the performance enhancement. The operation of this device in a SMPS application is shown in detail, and results regarding electrical and thermal characteristics in comparison to the power MOSFET device solution are discussed. The experimental tests that have been carried out are targeted to show the suitability of this device when a 1000-1500V operation is required and a single switch topology is the most appropriate. Some remarks about the driving circuit adopted for the cascode are also reported.

	A Novel RESURFed Double Gates IGBT with Superior Performance By Dongming Wu and Lingling Yang	[View] [Download]
Abstract: In this paper, we proposed a novel RESURFed double channels LIGBT which can achieve high breakdown voltage. The proposed structure, incorporating trench gate and planar gate, can significantly improve the capacity for handling high current and conductance modulation. P-top layer and deep n-drift/p-sub junction have been adopted, which results in a 745V breakdown voltage with the drift length of 44mm only. Reduction in drift length can not only reduce on-resistance but also raise current density. Simulation results demonstrate that the forward voltage drop can lower by 12\% relative to the conventional one while breakdown voltage can increase by 18\%.

	An Analysis on Turn-Off Behaviour of 1.2kV NPT-CIGBT Under Clamped Inductive Load Switching By S. T. Kong, L. Ngwendson, M. Sweet and E. M. Sankara Narayanan	[View] [Download]
Abstract: For the first time, this paper analyses the turn-off behaviour of the planar 1.2kV/25A NPT-CIGBT under clamped inductive load switching in detail through experiment and simulation. Turn-off behaviour of the CIGBT involves strong interaction between device and circuit parameters. The circuit parameter such as gate resistance was varied, in order to observe the di/dt, dv/dt and turn-off energy loss of the device. Experimental results are shown at 25°C and 125°C. In addition, numerical simulation results are used to enhance understanding of the internal physics of the NPT-CIGBT turn-off process.

	An Empiric Approach to Establishing MOSFET Failure Rate Induced by Single-Event Burnout By Jeroen van Duivenbode and Bart Smet	[View] [Download]
Abstract: Although the detrimental effect of Single- Event Burnout on semiconductors has been known for over two decades, component manufacturers publish little related data. Through extensive testing, the authors have established trustworthy reliability figures and demonstrate that Single-Event Burnout has a remarkably high impact on power converter failure rate. A standard testing method is proposed for improved power semiconductor qualification testing.

	Exact Circuit Power Loss Design Method for High Power Density Converters Utilizing Si-IGBT/SiC-Diode Hybrid Pairs By Kazuto Takao	[View] [Download]
Abstract: An exact design method of circuit power loss is developed. The method is useful for designing high power density converters utilizing Si-IGBT/SiC-Shottky-barrier-diode (SiC-SBD) or high voltage Si-IEGT/SiC-PiN-diode hybrid pairs. For the exact power loss calculation, an empirical method to extract device model parameters is introduced. The calculation results of the power loss are compared with experimental results, and the good agreements are confirmed. By using the method, the power loss of the 4.5 kV Si-IEGT/5 kV SiC-PiN diode hybrid pair is estimated to investigate the possibility of further increase of the switching frequency.

	In-Service Life Consumption Estimation in Power Modules By Mahera Musallam	[View] [Download]
Abstract: Health management and reliability form a fundamental part of the design and development cycle of electronic products. In this paper compact real-time thermal models are used to predict temperatures of inaccessible locations within the power module. These models are then combined with physics of failure based reliability analysis to provide in-service predictions of crack propagation in solder layers and at the bond wire joints as a result of thermal cycling. The temperature estimates are combined with lifetime based reliability models to provide a tool for life consumption monitoring. Rainflow counting algorithms are applied to the temperature vs. time data to extract the occurrence frequencies of different thermal cycling ranges. Knowledge of the life consumed for each different cycle then allows the remaining life time to be estimated under arbitrary operational conditions. The technique can be employed to provide functions such as life consumption monitoring and prognostic maintenance scheduling.

	Measurement of Temperature Sensitive Parameter Characteristics of Semiconductor Silicon and Silicon - Carbide Power Devices By Mietek Nowak, Jacek Rabkowski and Roman Barlik	[View] [Download]
Abstract: In this paper, results of laboratory investigation of representative samples of semiconductor silicon and silicon carbide power devices, such as PiN diode, Shottky diode, IGBT and JFET, are presented. With use of a thermal chamber the characteristics of temperature sensitive parameters for selected types of devices were determined by measurements within the range 25 - 150°C. The measurement was done using short pulses, which are not able to change measured temperatures. The results have to enable identification of junction temperature in the case of other tests, especially those oriented on energy losses, efficiency, and thermal management.

	Switching and Conducting Performance of SiC-JFET and ESBT Against MOSFET and IGBT By André Knop	[View] [Download]
Abstract: Here the switching and conducting performance of a SiC-JFET, an Emitter-Switching Bipolar Transistor (ESBT) and conventional power semiconductors as MOSFET and IGBT with Si- and SiC-diode is presented. The variety of power semiconductors is growing and there is a need to get rules to select them for the application given. The structure and special characteristics of the new devices are explained. The switching and conducting behavior of the devices is measured and investigated. The test circuit and the measurement method are presented. Based on the measured waveforms the power losses are calculated. The results of the switching and conducting performance of these power semiconductors are discussed.

	Turn-Off Behaviour of High Voltage NPT- and FS-IGBT By Hans-Guenter Eckel	[View] [Download]
Abstract: A simple but physical based one dimensional model is used to characterize the turn-off of high voltage IGBTs. The dependence of the overvoltage and the peak electric field on the gate driving conditions is analyzed. The transition from a triangular to a trapezoidal electric field has a major impact on the turn-off behaviour. If this transition occurs during the voltage slope, the dv/dt increases significantly. If the field-stop layer is reached during the current slope, the current snaps off, which leads to a second voltage spike with a high absolute voltage but only a moderate peak field.

	Unsymmetrical Gate Voltage Drive for High Power 1200V IGBT4 Modules Based on Coreless Transformer Technology Driver By Piotr Luniewski	[View] [Download]
Abstract: The performance of the new IGBT4 chip technology in PrimePACKTM high power module housing is presented here together with the Coreless Transformer technology driver IC for the first time in this paper. These modules usually are driven using symmetrical gate drive voltage of +/-15V. The driver presented here uses unsymmetrical gate drive voltage of -7V and +15V. This alternate approach results in different dynamic module behaviour compared to classical. Thus, this paper discusses differences in both concepts and brings a solution which allows to use the unsymmetrical concept as well as symmetrical.