| Abstract |
An exact design method of circuit power loss is developed. The method is useful for designing high power density converters utilizing Si-IGBT/SiC-Shottky-barrier-diode (SiC-SBD) or high voltage Si-IEGT/SiC-PiN-diode hybrid pairs. For the exact power loss calculation, an empirical method to extract device model parameters is introduced. The calculation results of the power loss are compared with experimental results, and the good agreements are confirmed. By using the method, the power loss of the 4.5 kV Si-IEGT/5 kV SiC-PiN diode hybrid pair is estimated to investigate the possibility of further increase of the switching frequency. |
