EPE Association: EPE 2007 - Subtopic 01-1 - LS: IGBT and freewheeling diodes

EPE 2007 - Subtopic 01-1 - LS: IGBT and freewheeling diodes
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2007 - Conference > EPE 2007 - Topic 01: 'Active devices' > EPE 2007 - Subtopic 01-1 - LS: IGBT and freewheeling diodes

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   New Plasma Shaping Technology for Optimal High Voltage Diode Performance
By RAHIMO Munaf; KOPTA Arnost; SCHLAPBACH Ulrich [View]
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Abstract: In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV diodes for next generation high power IGBT modules will be presented. The new diode range offers low losses and soft recovery characteristics combined with a high reverse recovery safe operating area and superior surge current capability. The new diode technology employs a double local lifetime-control method using He irradiation to control the on-state electron-hole distribution on both the anode and cathode sides of the diode.

   Next Generation of IGBT-Modules Applied to High Power Traction
By ECKEL Hans-GÃ¼nter; NAGEL Andreas; HELSPER Martin; BAKRAN Mark [View]
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Abstract: Modern high power traction converters are equipped with IGBT-modules. For a reliable operation the modules have to fulfil the following requirements: High junction temperature limit, large safe operating area, high surge current capability and sufficient thermal cycling capability. In this paper current and next generation of IGBT modules will be characterised regarding the first three aspects.

   Turn-off failure mechanism analysis of Trench IGBT under clamped inductive switching operation
By BENMANSOUR Adel; AZZOPARDI Stephane; WOIRGARD Eric; MARTIN Jean Christophe [View]
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Abstract: The investigation of the internal physical behaviour of the Punch Through Trench Insulated Gate Bipolar Transistor, under Clamped Inductive Switching turn-off has been done. A two dimensional mixed circuit and device simulation tool has been used and two switching configurations have been carried out: a non-destructive and a destructive turn-off switchings have been analyzed and compared to each other. The results show that the failure is delayed after the turn-off and is due to a thermal runaway phenomenon initiated by the temperature rise within the device during the switching transient.

EPE 2007 - Subtopic 01-1 - LS: IGBT and freewheeling diodes
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2007 - Conference > EPE 2007 - Topic 01: 'Active devices' > EPE 2007 - Subtopic 01-1 - LS: IGBT and freewheeling diodes
	[return to parent folder]

	New Plasma Shaping Technology for Optimal High Voltage Diode Performance By RAHIMO Munaf; KOPTA Arnost; SCHLAPBACH Ulrich	[View] [Download]
Abstract: In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV diodes for next generation high power IGBT modules will be presented. The new diode range offers low losses and soft recovery characteristics combined with a high reverse recovery safe operating area and superior surge current capability. The new diode technology employs a double local lifetime-control method using He irradiation to control the on-state electron-hole distribution on both the anode and cathode sides of the diode.

	Next Generation of IGBT-Modules Applied to High Power Traction By ECKEL Hans-GÃ¼nter; NAGEL Andreas; HELSPER Martin; BAKRAN Mark	[View] [Download]
Abstract: Modern high power traction converters are equipped with IGBT-modules. For a reliable operation the modules have to fulfil the following requirements: High junction temperature limit, large safe operating area, high surge current capability and sufficient thermal cycling capability. In this paper current and next generation of IGBT modules will be characterised regarding the first three aspects.

	Turn-off failure mechanism analysis of Trench IGBT under clamped inductive switching operation By BENMANSOUR Adel; AZZOPARDI Stephane; WOIRGARD Eric; MARTIN Jean Christophe	[View] [Download]
Abstract: The investigation of the internal physical behaviour of the Punch Through Trench Insulated Gate Bipolar Transistor, under Clamped Inductive Switching turn-off has been done. A two dimensional mixed circuit and device simulation tool has been used and two switching configurations have been carried out: a non-destructive and a destructive turn-off switchings have been analyzed and compared to each other. The results show that the failure is delayed after the turn-off and is due to a thermal runaway phenomenon initiated by the temperature rise within the device during the switching transient.