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New Plasma Shaping Technology for Optimal High Voltage Diode Performance
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| Author(s) |
RAHIMO Munaf; KOPTA Arnost; SCHLAPBACH Ulrich |
| Abstract |
In this paper, a newly developed diode technology platform for 3.3 kV, 4.5 kV and 6.5 kV diodes for next generation high power IGBT modules will be presented. The new diode range offers low losses and soft recovery characteristics combined with a high reverse recovery safe operating area and superior surge current capability. The new diode technology employs a double local lifetime-control method using He irradiation to control the on-state electron-hole distribution on both the anode and cathode sides of the diode. |
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| Filename: | 0650-epe2007-full-19021800.pdf |
| Filesize: | 823.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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