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Turn-off failure mechanism analysis of Trench IGBT under clamped inductive switching operation
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| Author(s) |
BENMANSOUR Adel; AZZOPARDI Stephane; WOIRGARD Eric; MARTIN Jean Christophe |
| Abstract |
The investigation of the internal physical behaviour of the Punch Through Trench Insulated Gate Bipolar Transistor, under Clamped Inductive Switching turn-off has been done. A two dimensional mixed circuit and device simulation tool has been used and two switching configurations have been carried out: a non-destructive and a destructive turn-off switchings have been analyzed and compared to each other. The results show that the failure is delayed after the turn-off and is due to a thermal runaway phenomenon initiated by the temperature rise within the device during the switching transient. |
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| Filename: | 0445-epe2007-full-18464971.pdf |
| Filesize: | 783 KB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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