EPE Association: NORpie 2000 - Topic 04: SEMICONDUCTORS

NORpie 2000 - Topic 04: SEMICONDUCTORS
You are here: EPE Documents > 05 - EPE Supported Conference Proceedings > NORpie - Proceedings > NORpie 2000 > NORpie 2000 - Topic 04: SEMICONDUCTORS

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   Fuse Protection of IGBT’s Against Rupture
By F. Abrahamsen; F. Blaabjerg; K. Ries; H. Rasmussen [View]
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Abstract: More power electronic applications use a voltage source dclink as the source to generate either ac or dc. The power level is still increasing and more energy is stored in the dc-link. Despite the active protection, a high-power IGBT still has a small risk of exhibiting a violent rupture in the case of a fault, and one solution is to protect the converter with high-speed fuses. This paper discusses failures in three phase inverters, and where it is best to place protecting fuses in the converter. Experiments made with 400 A, 1200 V IGBT switches show that rupture can be avoided by use of fast fuse protection. The problem of adding inductance is treated, the inductance of existing high-speed fuses are measured, and possible future low-inductance fuse designs are discussed.

   Electro-Thermal Circuit Model for the Power Diode Turn-On Process
By R. Kolessar; H.-P. Nee [View]
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Abstract: In this paper, an electro-thermal model for the power diode turn-on, implemented in the circuit simulator SABER, is presented. The model is based on an approximation of the carrier distribu- tion in the n-base of the diode using second degree polynomials resulting in a fast but accurate calcu- lation method. The turn-on physics is accurately described by taking into account low injection level as well as a correct transport equation for the minority carriers. Model performances are compared both to device numerical simulations and measurements and show good agreements for various circuit and temperature conditions, as well as for different device designs.

   Measurement of Dynamic Characteristics of 1200 A / 1700V IGBT-Modules under Worst Case Conditions
By M. Helsper; F. W. Fuchs; R. Jakob [View]
[Download]

Abstract: A test stand for measuring dynamic characteristics of power semiconductor devices has been developed. The test stand is introduced and the measurement system is explained. Investigations by measurement of the dynamic behaviour of 1200 A/ 1700 V IGBT modules made by Mitsubishi Electric are presented and analysed, with special regard to the behaviour under worst case and worst case fault conditions. The measurements give information about the properties of the modules under high stress conditions.

NORpie 2000 - Topic 04: SEMICONDUCTORS
You are here: EPE Documents > 05 - EPE Supported Conference Proceedings > NORpie - Proceedings > NORpie 2000 > NORpie 2000 - Topic 04: SEMICONDUCTORS
	[return to parent folder]

	Fuse Protection of IGBT’s Against Rupture By F. Abrahamsen; F. Blaabjerg; K. Ries; H. Rasmussen	[View] [Download]
Abstract: More power electronic applications use a voltage source dclink as the source to generate either ac or dc. The power level is still increasing and more energy is stored in the dc-link. Despite the active protection, a high-power IGBT still has a small risk of exhibiting a violent rupture in the case of a fault, and one solution is to protect the converter with high-speed fuses. This paper discusses failures in three phase inverters, and where it is best to place protecting fuses in the converter. Experiments made with 400 A, 1200 V IGBT switches show that rupture can be avoided by use of fast fuse protection. The problem of adding inductance is treated, the inductance of existing high-speed fuses are measured, and possible future low-inductance fuse designs are discussed.

	Electro-Thermal Circuit Model for the Power Diode Turn-On Process By R. Kolessar; H.-P. Nee	[View] [Download]
Abstract: In this paper, an electro-thermal model for the power diode turn-on, implemented in the circuit simulator SABER, is presented. The model is based on an approximation of the carrier distribu- tion in the n-base of the diode using second degree polynomials resulting in a fast but accurate calcu- lation method. The turn-on physics is accurately described by taking into account low injection level as well as a correct transport equation for the minority carriers. Model performances are compared both to device numerical simulations and measurements and show good agreements for various circuit and temperature conditions, as well as for different device designs.

	Measurement of Dynamic Characteristics of 1200 A / 1700V IGBT-Modules under Worst Case Conditions By M. Helsper; F. W. Fuchs; R. Jakob	[View] [Download]
Abstract: A test stand for measuring dynamic characteristics of power semiconductor devices has been developed. The test stand is introduced and the measurement system is explained. Investigations by measurement of the dynamic behaviour of 1200 A/ 1700 V IGBT modules made by Mitsubishi Electric are presented and analysed, with special regard to the behaviour under worst case and worst case fault conditions. The measurements give information about the properties of the modules under high stress conditions.