| Abstract |
In this paper, an electro-thermal model for the
power diode turn-on, implemented in the circuit
simulator SABER, is presented. The model is
based on an approximation of the carrier distribu-
tion in the n-base of the diode using second degree
polynomials resulting in a fast but accurate calcu-
lation method. The turn-on physics is accurately
described by taking into account low injection
level as well as a correct transport equation for
the minority carriers. Model performances are
compared both to device numerical simulations
and measurements and show good agreements for
various circuit and temperature conditions, as
well as for different device designs. |
