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Measurement of Dynamic Characteristics of 1200 A / 1700V IGBT-Modules under Worst Case Conditions
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| Author(s) |
M. Helsper; F. W. Fuchs; R. Jakob |
| Abstract |
A test stand for measuring dynamic characteristics of power
semiconductor devices has been developed. The test stand is
introduced and the measurement system is explained.
Investigations by measurement of the dynamic behaviour of
1200 A/ 1700 V IGBT modules made by Mitsubishi Electric
are presented and analysed, with special regard to the
behaviour under worst case and worst case fault conditions.
The measurements give information about the properties of
the modules under high stress conditions. |
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| Filename: | Unnamed file |
| Filesize: | 135.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-20 by System |
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