By V. V. N. Obreja(ro), C. Codreanu(ro), K. I. Nuttall(uk), O. Buiu(uk), C. Podaru(ro), A. Obreja(ro), I. Codreanu(ro)
By A. Gasparyan, G. Lauza, V. Uzars
| EPE-PEMC 2004 - Topic 01-8: Reliability of devices | ||
| You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2004 - Conference > EPE-PEMC 2004 - Topic 01: DEVICES > EPE-PEMC 2004 - Topic 01-8: Reliability of devices | ||
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| | Influence Of The Surface Leakage Current On Reliability Of Power Silicon Devices Operated At High Junction Temperature
By V. V. N. Obreja(ro), C. Codreanu(ro), K. I. Nuttall(uk), O. Buiu(uk), C. Podaru(ro), A. Obreja(ro), I. Codreanu(ro) | |
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Abstract: Experiments on present-day commercial available
power diodes, transistors and thyristors reveal a non-negligible
surface current component for the leakage current of high
voltage blocking junctions. This surface current even as a
secondary component is a source of thermal instability for the
junction blocking I-V characteristic. For this reason power
silicon devices are not able to reliable operate at junction
temperature higher than 150-200 oC. Nonetheless, advance in
the junction passivation techniques could enable further
reduction of the surface leakage current and reliable operation
at higher temperature.
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| | Preventive Technical Maintenance Of Pwm And Cyklo Type Power Converters
By A. Gasparyan, G. Lauza, V. Uzars | |
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Abstract: The parameter concept of safety of power
semiconductor devices is offered considering the exeeding
certain rationed values of a particular informative parameter as
a failure. The results of experimental data as well as statistical
analyses are presented in the paper. Statistical models of
parameter drift and the forecast of rationed values of
informative parameters are offered as the basis for preventive
technical maintenance.
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