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Influence Of The Surface Leakage Current On Reliability Of Power Silicon Devices Operated At High Junction Temperature
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| Author(s) |
V. V. N. Obreja(ro), C. Codreanu(ro), K. I. Nuttall(uk), O. Buiu(uk), C. Podaru(ro), A. Obreja(ro), I. Codreanu(ro) |
| Abstract |
Experiments on present-day commercial available
power diodes, transistors and thyristors reveal a non-negligible
surface current component for the leakage current of high
voltage blocking junctions. This surface current even as a
secondary component is a source of thermal instability for the
junction blocking I-V characteristic. For this reason power
silicon devices are not able to reliable operate at junction
temperature higher than 150-200 oC. Nonetheless, advance in
the junction passivation techniques could enable further
reduction of the surface leakage current and reliable operation
at higher temperature. |
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| Filename: | A18526 |
| Filesize: | 221.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-15 by System |
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