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EPE Journal Volume 07-3/4 - Papers
- Barrier lowering Effects for Metal-Silicide Schottky diodes at High Reverse Bias
- Semiconductor Device Failures in Power Converter Service Conditions
- Introduction of "Dual-Switching" Cells in High-Power Phase-Controlled Converters
- Isolated ZVS-PWM Power Factor Correction Converter
- High-Power-Factor Battery Charger Using Multilevel Techniques
- White Paper on the new ABB medium voltage drive system, using IGCT power semiconductors and Direct Torque Control
- Remarks to the Paper: A Three-Phase Four-Wire Shunt Active Filter Employing a Conventional Three-Leg Converter, Vol. 06-3-4, pp 54-59
EPE Journal Volume 07-3/4 - Editorial
By B. Sneyers
The Editorial of the EPE Journal Volume 07 N°3/4, "EPE'99: 6 more months to go!", written by Ir. Brigitte Sneyers, the Secretary General of EPE Association
EPE Journal Volume 07-3/4 - Papers
By C. Furio; G. Charitat; A. Lhorte; J.-M. Dilhac
From experimental data, it is demonstrated that the common field-dependent lowering models are not sufficient to account for the softness of the reverse I(V) characteristics of metal-Silicide Schottky power diodes at high reverse bias voltages. In an attempt to explain this behaviour, we first consider by means of numerical simulations as well as experimental characterizations, the effects of Schottky barier height inhomogeneities: it is shown that these effects cannot explain the above effect. A new barrier lowering model is then derived from experimental characterization of diode structures exhibiting different technological features (Silicide type, doping level, drift region thickness). A single barrier lowering law versus electric field can be expressed for the complete range of Schottky diodes investigated. This allows a discription of metal-Silicide Schottky power diode behaviour at high reverse bias voltages, covering a wider voltage range than previous models, with a good agreement between calculated and experimental data. Numerical results obtained from Pisces simulations using this new model gives equally excellent agreement between simulated and measured values.
By S. Januszewski; M. Kociszewska-Szczerbik; H. Swiatek; G. Swiatek
The failure analysis of power semiconductor devices (PSD) is valuable information to make some necessary converter circuit correction. Differences between PSD and signal device failures are described. Main failure mechanisms of SCR thyristors, GTO thyristors, IGBT transistors and power MOSFET's are discussed. Failures due a thermal fatigue are given as well. Selected results with example photos of PSD destroyed surfaces are presented. Expert systems used in PSD failure analysis are described.
By F. Richardeau; Ph. Ladoux; Y. Chéron
High power converters (MW), thyristor arrangements in phase-controlled mode by the voltages of the power supply network. However, low-rank harmonic currents and lagging reactive power are drawn on a.c. side. In this paper, a new "dual-switching" mode with GTO switches reverse blocking abilities is studied and carried out in basic rectifier bridges and naturally commutated cycloconverter topologies. This concept allows to suppress the reactive power flow between power supply network and direct converters whatever load parameters. Global features are given with a final comparison list, especially on the following "dual-switching" topologies: full-bridges cycloconverter, mixed-bridges cycloconverter and series arrangement of full-bridges cycloconverters. Presented experimental results are based on a 20 kVA versatile cycloconverterprototype and confirm the theoretical study. These topologies are expected for a better matching between network and high power converters.
By G.-W. Moon; W.-K. Min; K.-H. Kim; M.-Y. Youn
A novel isolated zero voltage switching (ZVS) PWM power factor correction circuit is proposed. this circuit provides the input power factor correction and dierct conversion from AC line to 48Vdc bus. This topology has the advantages of zero voltage switching for all devices except for an additional switch without increasing voltage/current stress and with constant switching frequency. Experimental results are given to show the feasibility of the proposed power factor correction converter.
By P. Bartholoméüs; P. Le Moigne
It is nowadays unthinkable to design a new power electronic device without taking into account the electromagnetic interference (EMI) problems. In this paper, a new type of battery charger is presented with two original points:
- the use of a new kind of multilevel rectifier, which seems very interesting, in spite of its relative complexity,
- the use of a series resonant converter working at the resonance frequency which simplifies the control of this device.
The selected structure is presented after consideration of the advantages and drawbacks of the classical ones and after the presentation of the main solutions allowing for the reduction of the electromagnetic interferences. The different parts of this charger are presented with their particular working. A simple model has been used in order to size each element. Finally, experimental results validate the study.
By P. Lataire
This paper will be available soon. - This paper describes the new medium voltage PWM converter developed by ABB for driving medium voltage squirrel cage induction motors in a power range of 500 kVA. The role of the author was to witness, as an academic party, the different features that the developer-manufacturer included to a come to a competitive product. The paper is build up arround the technical features that the developer's team selected to reach their objectives: three level converter topology with LC output filter and input isolation transformer, advanced thyristor technology (IGCT = Integrated Gate Commutated Thyristor), advanced control principles (DTC = Direct Torque Control) and fuseless design. The author asked the manufacturer to provide comprehensive experimental data, which are reported in this paper, to evaluate the statements and the benefits of the drive.
See as well the "Remarks to the paper "White Paper on the new ABB medium voltage drive system, using IGCT power semiconductors and Direct Torque Control", published in EPE Journal Volume 09-3-4" by Prof. B.K. Bose.
By V. Staudt
The paper mentioned above presents an interesting compensator topology to compensate the undesired parts not only of the three line currents but also of the neutral current. However, I cannot agree with all of the conclusions concerning power theory and I think that more simple and more efficient control strategies have already been published...