The failure analysis of power semiconductor devices (PSD) is valuable information to make some necessary converter circuit correction. Differences between PSD and signal device failures are described. Main failure mechanisms of SCR thyristors, GTO thyristors, IGBT transistors and power MOSFET's are discussed. Failures due a thermal fatigue are given as well. Selected results with example photos of PSD destroyed surfaces are presented. Expert systems used in PSD failure analysis are described.
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