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 EPE 2025 - DS1m: Cooling Circuits and Thermal Management 
 You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2025 - Conference > EPE 2025 - Topic 07: Semiconductor Devices and Packaging > EPE 2025 - DS1m: Cooling Circuits and Thermal Management 
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   Improving thermal management of SiC MOSFET through cold plates and/or power modules optimization 
 By Wahid CHERIEF, Aitor CASADO RAMONEDA, Jérôme GIOLAT, Yvan AVENAS, Rabih KHAZAKA, Mickael DEBEZE 
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Abstract: An experimental and numerical investigation on the impact of internal heat spreader and optimized cold plate for cooling SiC power module is presented. Silver-diamond (AgD) composites are used as heat spreaders under the SiC chips, while the cold plates are fitted with specific geometries to enhance convective heat transfers. This study is conducted for a flow regime varying from 500 inf. Reynolds inf. 8000. Thermal results show that the use of heat spreaders induces a 20\% reduction of Rth(j-a). Similarly, an optimized cold plate design would reduce the cold plate thermal resistance by more than 55\%. The study demonstrates that the heat spreader efficiency is better in the case of the use of an optimized design cold plate.