EPE Association: EPE 2025 - DS3f: Measurement Techniques, Sensors and State Observers

EPE 2025 - DS3f: Measurement Techniques, Sensors and State Observers
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2025 - Conference > EPE 2025 - Topic 11: Measurement, Supervision and Control for Power Converters > EPE 2025 - DS3f: Measurement Techniques, Sensors and State Observers

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   Comparison of the electrical and thermal method for determining the power losses of a QDPAK-MOSFET
By Marcus PRAAST, Christopher ZEIDLER, Thomas KOMMA [View]
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Abstract: Due to increasingly higher switching speeds, the electrical determination of power losses in power electronics is more challenging. In this paper, a double-pulse test is performed to determine the switching losses of a MOSFET. Additionally, it presents an approach for the thermal determination of power losses in semiconductors, which significantly reduces measurement duration from minutes to seconds. The accuracy of the thermal method is demonstrated, with a deviation of 0.16\% between the measurement results and those obtained with a power analyzer. Beyond its high accuracy, the thermal method offers high resolution, enabling the detection of even the smallest differences in power losses. Furthermore, a comparison between electrical and thermal power loss determination is provided.

   Gigahertz, Low-Cost Current Shunt with Retrofitting Capability for Characterization of Fast-Switching GaN Devices
By Sebastian KLÖTZER, Jim HONEA, Nils DUCHOW, Georgii IASHIN [View]
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Abstract: A low-cost current shunt based on a flexible polyimide printed circuit board (PCB) design is presented. With low insertion inductance in the range of 300 pH and bandwidth in excess of 1 GHz, the design is suitable to be used for characterization of very fast GaN devices. Due to its very low thickness, it is possible to retroactively integrate the sensor into many existing designs that were not specifically prepared for current measurement. Thus, it offers an alternative to designing specific PCBs only for switching characterization.

   Inductive Current Sensing for Closely Spaced Antiparallel Conductor Pairs
By Dirk RUDOLPH, Lars LINDENMÜLLER, Steffen BERNET [View]
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Abstract: Based on two individual current measurements of two antiparallel conductors (e.g., the DC terminals of an IGBT module), a method is described that relies on a common current measurement. This approach avoids placing a sensor between the two conductors, thus not limiting the isolation distances between them and enables current measurement even where there is no space for an inductive sensor between the two conductors.

   Quantifying Incomplete Zero-Voltage Switching Losses Using Equivalent Hard-Switching Losses
By Mike ZÄCH, Szymon BECZKOWSKI, Asger Bjørn JØRGENSEN, Stig MUNK-NIELSEN [View]
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Abstract: With fast switching wide band-gap semiconductorsconquering high-power application, zerovoltageswitching (ZVS) topologies are crucial toincrease converter efficiency by minimizing switchinglosses. However, ZVS criteria cannot always be fulfilledin the entire operating range of the converter. In thiscase, the converter enters incomplete ZVS (iZVS).The losses during iZVS cannot be quantified using conventionaldouble-pulse tests, but require calorimetricmeasurement setups, and separation of turn-on, conduction,and turn-off losses. This can be obtained fordiscrete devices, but is not possible for power modules.In this paper, a method to estimate the switching lossesduring iZVS using equivalent hard-switching lossesis presented and experimentally verified,

EPE 2025 - DS3f: Measurement Techniques, Sensors and State Observers
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2025 - Conference > EPE 2025 - Topic 11: Measurement, Supervision and Control for Power Converters > EPE 2025 - DS3f: Measurement Techniques, Sensors and State Observers
	[return to parent folder]

	Comparison of the electrical and thermal method for determining the power losses of a QDPAK-MOSFET By Marcus PRAAST, Christopher ZEIDLER, Thomas KOMMA	[View] [Download]
Abstract: Due to increasingly higher switching speeds, the electrical determination of power losses in power electronics is more challenging. In this paper, a double-pulse test is performed to determine the switching losses of a MOSFET. Additionally, it presents an approach for the thermal determination of power losses in semiconductors, which significantly reduces measurement duration from minutes to seconds. The accuracy of the thermal method is demonstrated, with a deviation of 0.16\% between the measurement results and those obtained with a power analyzer. Beyond its high accuracy, the thermal method offers high resolution, enabling the detection of even the smallest differences in power losses. Furthermore, a comparison between electrical and thermal power loss determination is provided.

	Gigahertz, Low-Cost Current Shunt with Retrofitting Capability for Characterization of Fast-Switching GaN Devices By Sebastian KLÖTZER, Jim HONEA, Nils DUCHOW, Georgii IASHIN	[View] [Download]
Abstract: A low-cost current shunt based on a flexible polyimide printed circuit board (PCB) design is presented. With low insertion inductance in the range of 300 pH and bandwidth in excess of 1 GHz, the design is suitable to be used for characterization of very fast GaN devices. Due to its very low thickness, it is possible to retroactively integrate the sensor into many existing designs that were not specifically prepared for current measurement. Thus, it offers an alternative to designing specific PCBs only for switching characterization.

	Inductive Current Sensing for Closely Spaced Antiparallel Conductor Pairs By Dirk RUDOLPH, Lars LINDENMÜLLER, Steffen BERNET	[View] [Download]
Abstract: Based on two individual current measurements of two antiparallel conductors (e.g., the DC terminals of an IGBT module), a method is described that relies on a common current measurement. This approach avoids placing a sensor between the two conductors, thus not limiting the isolation distances between them and enables current measurement even where there is no space for an inductive sensor between the two conductors.

	Quantifying Incomplete Zero-Voltage Switching Losses Using Equivalent Hard-Switching Losses By Mike ZÄCH, Szymon BECZKOWSKI, Asger Bjørn JØRGENSEN, Stig MUNK-NIELSEN	[View] [Download]
Abstract: With fast switching wide band-gap semiconductorsconquering high-power application, zerovoltageswitching (ZVS) topologies are crucial toincrease converter efficiency by minimizing switchinglosses. However, ZVS criteria cannot always be fulfilledin the entire operating range of the converter. In thiscase, the converter enters incomplete ZVS (iZVS).The losses during iZVS cannot be quantified using conventionaldouble-pulse tests, but require calorimetricmeasurement setups, and separation of turn-on, conduction,and turn-off losses. This can be obtained fordiscrete devices, but is not possible for power modules.In this paper, a method to estimate the switching lossesduring iZVS using equivalent hard-switching lossesis presented and experimentally verified,