| Abstract |
Due to increasingly higher switching speeds, the electrical determination of power losses in power electronics is more challenging. In this paper, a double-pulse test is performed to determine the switching losses of a MOSFET. Additionally, it presents an approach for the thermal determination of power losses in semiconductors, which significantly reduces measurement duration from minutes to seconds. The accuracy of the thermal method is demonstrated, with a deviation of 0.16\% between the measurement results and those obtained with a power analyzer. Beyond its high accuracy, the thermal method offers high resolution, enabling the detection of even the smallest differences in power losses. Furthermore, a comparison between electrical and thermal power loss determination is provided. |
