EPE Association: EPE 2022 - DS1b: Active Devices and Components (Si)

EPE 2022 - DS1b: Active Devices and Components (Si)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 01: Devices, Packaging and System Integration > EPE 2022 - DS1b: Active Devices and Components (Si)

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   Boosting Pilot-Diode Reverse-Conducting IGBTs Turn-ON and Reverse-Recovery Losses with a Simple Gate-Control Technique
By Daniel LEXOW [View]
[Download]

Abstract: PD-RC-IGBTs reverse-recovery and turn-ON losses are significantly improvable by reducing the inverter interlock time in diode conduction mode. Device Measurements with 1200 V PD-RC-IGBTs reveal a loss reduction potential of up to 27,5 \% for reverse-recovery and 26,2 \% for turn-ON energy losses, compared to state-of-the-art inverter interlock times. A gate control realizing this selective inverter interlock time adaption for the diode mode, as well as the corresponding measurements and loss calculations, are presented.

   Influence of IGBT and Diode Parameters on the Current Sharing and Switching-Waveform Characteristics of Parallel-Connected Power Modules
By Yu ANDO [View]
[Download]

Abstract: The parallel connection of IGBT power modules allows flexible power converter designs. However, differences in parameters like forward and threshold voltage (_VCEsat, _VGE(th), and _VEC) between parallel-connected power modules may particularly influence static and dynamic current sharing, and switching characteristics, among several factors. Therefore, when designing converters with parallel-connected power modules, current sharing and switching characteristics of individual power modules must be considered to ensure operation within safe operating area and temperature limits. Derating is to be considered if necessary. Identifying the influential parameters in a parallel-connection, and quantifying their influence on current sharing and switching characteristics, are essential to understand and optimize the amount of derating. This paper first describes the measurement results of ten parallel-connected pairs of 3.3 kV IGBT power modules. Afterwards, the imbalance of switching characteristics (such as switching energy or current amount) is related to power-module parameters, by multiple linear regression. Fanally a methodology for defining the derating ratio for each switching characteristic is described.

EPE 2022 - DS1b: Active Devices and Components (Si)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 01: Devices, Packaging and System Integration > EPE 2022 - DS1b: Active Devices and Components (Si)
	[return to parent folder]

	Boosting Pilot-Diode Reverse-Conducting IGBTs Turn-ON and Reverse-Recovery Losses with a Simple Gate-Control Technique By Daniel LEXOW	[View] [Download]
Abstract: PD-RC-IGBTs reverse-recovery and turn-ON losses are significantly improvable by reducing the inverter interlock time in diode conduction mode. Device Measurements with 1200 V PD-RC-IGBTs reveal a loss reduction potential of up to 27,5 \% for reverse-recovery and 26,2 \% for turn-ON energy losses, compared to state-of-the-art inverter interlock times. A gate control realizing this selective inverter interlock time adaption for the diode mode, as well as the corresponding measurements and loss calculations, are presented.

	Influence of IGBT and Diode Parameters on the Current Sharing and Switching-Waveform Characteristics of Parallel-Connected Power Modules By Yu ANDO	[View] [Download]
Abstract: The parallel connection of IGBT power modules allows flexible power converter designs. However, differences in parameters like forward and threshold voltage (_VCEsat, _VGE(th), and _VEC) between parallel-connected power modules may particularly influence static and dynamic current sharing, and switching characteristics, among several factors. Therefore, when designing converters with parallel-connected power modules, current sharing and switching characteristics of individual power modules must be considered to ensure operation within safe operating area and temperature limits. Derating is to be considered if necessary. Identifying the influential parameters in a parallel-connection, and quantifying their influence on current sharing and switching characteristics, are essential to understand and optimize the amount of derating. This paper first describes the measurement results of ten parallel-connected pairs of 3.3 kV IGBT power modules. Afterwards, the imbalance of switching characteristics (such as switching energy or current amount) is related to power-module parameters, by multiple linear regression. Fanally a methodology for defining the derating ratio for each switching characteristic is described.