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	Boosting Pilot-Diode Reverse-Conducting IGBTs Turn-ON and Reverse-Recovery Losses with a Simple Gate-Control Technique	[View]   [Download]
Author(s)	Daniel LEXOW
Abstract	PD-RC-IGBTs reverse-recovery and turn-ON losses are significantly improvable by reducing the inverter interlock time in diode conduction mode. Device Measurements with 1200 V PD-RC-IGBTs reveal a loss reduction potential of up to 27,5 \% for reverse-recovery and 26,2 \% for turn-ON energy losses, compared to state-of-the-art inverter interlock times. A gate control realizing this selective inverter interlock time adaption for the diode mode, as well as the corresponding measurements and loss calculations, are presented.
Download	Filename: 0245-epe2022-full-17432047.pdf Filesize: 2.135 MB
Type	Members Only
Date	Last modified 2023-09-24 by System