EPE Association: EPE 2022 - LS3b: Wide Bandgap Power Devices

EPE 2022 - LS3b: Wide Bandgap Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 01: Devices, Packaging and System Integration > EPE 2022 - LS3b: Wide Bandgap Power Devices

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   Analysis of current sharing in the parallel connection of GaN transistors
By Frederik STALLEICKEN [View]
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Abstract: Commercially available GaN transistors are connected in parallel in order to overcome thermal limita-tions prohibiting a further current increase for the single transistor. The driver concept and the circuit layout are presented. The parallel connection is examined in double-pulse tests, analyzing the stability of the gate-voltage and the current sharing between the parallel transistors. An oscillation of the meas-ured drain currents of the individual transistors is identified and investigated in more detail.

   Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 V
By Norman BOETTCHER [View]
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Abstract: This paper presents the short circuit performance of a novel SiC circuit breaker device, which is based on the 'thyristor dual' functionality. The developed device structure is motivated with regard to manufacturing aspects and electrical requirements. Furthermore, the basic 'thyristor dual' operation is elaborated on the basis of quasi-static electrical measurements of a fabricated prototype. The proposed self-sensing and self-triggering devices make auxiliary circuitry like sensors and micro-controllers expendable and practically have no propagation delay. As a result, short circuit clearance within 122 ns at 800 v is demonstrated in experiments. Moreover, by utilisation of a third device terminal, a temporary current limiter functionality can be obtained. The scalability of the current limit value is discussed on the basis of measurements in time domain. The maximum current limit value achieved is 7.4 times higher than the trigger current level of the circuit breaker device. Additionally, the same circuit configuration which is used for the current limiting mode, allows to remotely reset the circuit breaker after it turned to blocking-state. This opens up a wide range of possibilities to enhance the circuit breaker with intelligent functionalities.

   Short Circuit Type II and III Behavior of 1.2 kV Power SiC-MOSFETs
By Xing LIU [View]
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Abstract: The application relevant short circuit (SC) behavior of 1.2 kV power SiC-MOSFETs during the forward conduction mode (type II) and the body-diode conduction (type III) is experimentally investigated in this paper. Compared with Si-IGBTs, the SC type II and III behavior are less critical from the perspective of short-circuit energy. The reason is due to the smaller ratio between the Miller-capacitance and gate-source capacitance and further the more significant short-channel effect or Drain Induced Barrier Lowering (DIBL) effect for SiC-MOSFETs. Moreover, the influence of the operation temperature and gate trapping effect on the SC behavior are discussed.

EPE 2022 - LS3b: Wide Bandgap Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 01: Devices, Packaging and System Integration > EPE 2022 - LS3b: Wide Bandgap Power Devices
	[return to parent folder]

	Analysis of current sharing in the parallel connection of GaN transistors By Frederik STALLEICKEN	[View] [Download]
Abstract: Commercially available GaN transistors are connected in parallel in order to overcome thermal limita-tions prohibiting a further current increase for the single transistor. The driver concept and the circuit layout are presented. The parallel connection is examined in double-pulse tests, analyzing the stability of the gate-voltage and the current sharing between the parallel transistors. An oscillation of the meas-ured drain currents of the individual transistors is identified and investigated in more detail.

	Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 V By Norman BOETTCHER	[View] [Download]
Abstract: This paper presents the short circuit performance of a novel SiC circuit breaker device, which is based on the 'thyristor dual' functionality. The developed device structure is motivated with regard to manufacturing aspects and electrical requirements. Furthermore, the basic 'thyristor dual' operation is elaborated on the basis of quasi-static electrical measurements of a fabricated prototype. The proposed self-sensing and self-triggering devices make auxiliary circuitry like sensors and micro-controllers expendable and practically have no propagation delay. As a result, short circuit clearance within 122 ns at 800 v is demonstrated in experiments. Moreover, by utilisation of a third device terminal, a temporary current limiter functionality can be obtained. The scalability of the current limit value is discussed on the basis of measurements in time domain. The maximum current limit value achieved is 7.4 times higher than the trigger current level of the circuit breaker device. Additionally, the same circuit configuration which is used for the current limiting mode, allows to remotely reset the circuit breaker after it turned to blocking-state. This opens up a wide range of possibilities to enhance the circuit breaker with intelligent functionalities.

	Short Circuit Type II and III Behavior of 1.2 kV Power SiC-MOSFETs By Xing LIU	[View] [Download]
Abstract: The application relevant short circuit (SC) behavior of 1.2 kV power SiC-MOSFETs during the forward conduction mode (type II) and the body-diode conduction (type III) is experimentally investigated in this paper. Compared with Si-IGBTs, the SC type II and III behavior are less critical from the perspective of short-circuit energy. The reason is due to the smaller ratio between the Miller-capacitance and gate-source capacitance and further the more significant short-channel effect or Drain Induced Barrier Lowering (DIBL) effect for SiC-MOSFETs. Moreover, the influence of the operation temperature and gate trapping effect on the SC behavior are discussed.