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Analysis of current sharing in the parallel connection of GaN transistors
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| Author(s) |
Frederik STALLEICKEN |
| Abstract |
Commercially available GaN transistors are connected in parallel in order to overcome thermal limita-tions prohibiting a further current increase for the single transistor. The driver concept and the circuit layout are presented. The parallel connection is examined in double-pulse tests, analyzing the stability of the gate-voltage and the current sharing between the parallel transistors. An oscillation of the meas-ured drain currents of the individual transistors is identified and investigated in more detail. |
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| Filename: | 0372-epe2022-full-01373368.pdf |
| Filesize: | 4.34 MB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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